JPS5723428B2 - - Google Patents
Info
- Publication number
- JPS5723428B2 JPS5723428B2 JP3933775A JP3933775A JPS5723428B2 JP S5723428 B2 JPS5723428 B2 JP S5723428B2 JP 3933775 A JP3933775 A JP 3933775A JP 3933775 A JP3933775 A JP 3933775A JP S5723428 B2 JPS5723428 B2 JP S5723428B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
- H01L29/78657—SOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3933775A JPS51114077A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3933775A JPS51114077A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51114077A JPS51114077A (en) | 1976-10-07 |
JPS5723428B2 true JPS5723428B2 (ja) | 1982-05-18 |
Family
ID=12550266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3933775A Granted JPS51114077A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51114077A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55140270A (en) * | 1979-04-19 | 1980-11-01 | Agency Of Ind Science & Technol | Insulated gate transistor |
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1975
- 1975-03-31 JP JP3933775A patent/JPS51114077A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS51114077A (en) | 1976-10-07 |