JPS5722917B2 - - Google Patents
Info
- Publication number
- JPS5722917B2 JPS5722917B2 JP9109975A JP9109975A JPS5722917B2 JP S5722917 B2 JPS5722917 B2 JP S5722917B2 JP 9109975 A JP9109975 A JP 9109975A JP 9109975 A JP9109975 A JP 9109975A JP S5722917 B2 JPS5722917 B2 JP S5722917B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9109975A JPS5215485A (en) | 1975-07-28 | 1975-07-28 | Process for growth of ribbon crystals by lateral pulling |
| DE2633961A DE2633961C2 (de) | 1975-07-28 | 1976-07-28 | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
| US05/863,480 US4329195A (en) | 1975-07-28 | 1977-12-22 | Lateral pulling growth of crystal ribbons |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9109975A JPS5215485A (en) | 1975-07-28 | 1975-07-28 | Process for growth of ribbon crystals by lateral pulling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5215485A JPS5215485A (en) | 1977-02-05 |
| JPS5722917B2 true JPS5722917B2 (enExample) | 1982-05-15 |
Family
ID=14017061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9109975A Granted JPS5215485A (en) | 1975-07-28 | 1975-07-28 | Process for growth of ribbon crystals by lateral pulling |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5215485A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8764901B2 (en) * | 2010-05-06 | 2014-07-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using elasticity and buoyancy |
| US8685162B2 (en) * | 2010-05-06 | 2014-04-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using gas jets |
| US9464364B2 (en) * | 2011-11-09 | 2016-10-11 | Varian Semiconductor Equipment Associates, Inc. | Thermal load leveling during silicon crystal growth from a melt using anisotropic materials |
-
1975
- 1975-07-28 JP JP9109975A patent/JPS5215485A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5215485A (en) | 1977-02-05 |