JPS5722450B2 - - Google Patents

Info

Publication number
JPS5722450B2
JPS5722450B2 JP5857477A JP5857477A JPS5722450B2 JP S5722450 B2 JPS5722450 B2 JP S5722450B2 JP 5857477 A JP5857477 A JP 5857477A JP 5857477 A JP5857477 A JP 5857477A JP S5722450 B2 JPS5722450 B2 JP S5722450B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5857477A
Other languages
Japanese (ja)
Other versions
JPS52142463A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS52142463A publication Critical patent/JPS52142463A/ja
Publication of JPS5722450B2 publication Critical patent/JPS5722450B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/284Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator monostable

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Pulse Circuits (AREA)
  • Electronic Switches (AREA)
JP5857477A 1976-05-21 1977-05-19 Monostable multivibrator Granted JPS52142463A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2120876 1976-05-21

Publications (2)

Publication Number Publication Date
JPS52142463A JPS52142463A (en) 1977-11-28
JPS5722450B2 true JPS5722450B2 (ref) 1982-05-13

Family

ID=10159006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5857477A Granted JPS52142463A (en) 1976-05-21 1977-05-19 Monostable multivibrator

Country Status (2)

Country Link
US (1) US4105901A (ref)
JP (1) JPS52142463A (ref)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69320326T2 (de) * 1993-05-07 1998-12-24 Sgs-Thomson Microelectronics S.R.L., Agrate Brianza, Mailand/Milano Mit niedriger Versorgungsspannung arbeitender, eine Hysteresis aufweisender Komparator

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2668236A (en) * 1944-09-23 1954-02-02 Philco Corp Electrical pulse-width discriminator
GB1052861A (ref) * 1963-04-23
US3310688A (en) * 1964-05-07 1967-03-21 Rca Corp Electrical circuits
US3590282A (en) * 1969-03-25 1971-06-29 Us Navy Blocking oscillator
US3801830A (en) * 1973-02-05 1974-04-02 Ford Motor Co Signal amplification circuit with phase detecting means and variable signal level recognition means

Also Published As

Publication number Publication date
JPS52142463A (en) 1977-11-28
US4105901A (en) 1978-08-08

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