JPS57200296A - Preparation of compound semiconductor of groups 3[5 containing aluminum - Google Patents

Preparation of compound semiconductor of groups 3[5 containing aluminum

Info

Publication number
JPS57200296A
JPS57200296A JP8401381A JP8401381A JPS57200296A JP S57200296 A JPS57200296 A JP S57200296A JP 8401381 A JP8401381 A JP 8401381A JP 8401381 A JP8401381 A JP 8401381A JP S57200296 A JPS57200296 A JP S57200296A
Authority
JP
Japan
Prior art keywords
molecular beams
beams
molecular
electron
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8401381A
Other languages
Japanese (ja)
Inventor
Tomonori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8401381A priority Critical patent/JPS57200296A/en
Publication of JPS57200296A publication Critical patent/JPS57200296A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To prepare an epitaxial crystal of high purity, in preparing the titled semiconductor crystal by the epitaxial growth method, by using molecular beams, obtaining Al molecular beams by the electron-beam vapor deposition method.
CONSTITUTION: In growing a Ga.As.Al compound semiconductor, a transverse type electron beam evaporating source is used to obtain Al molecular beams 9. An electric current is applied to a cathode filament 1 to withdraw electron rays, and an electric field is applied to take out electron beams 3, which are deflected by a magnetic pole 4 of a magnet and a deflecting magnetic coil 5 to irradiate only Al 8 in a molecular beam cell 7 cooled by cooling water 6 on the periphery thereof and generate Al molecular beams 9. The molecular beams 11 and 12 of Ga and As are generated by the resistance heating method. The resultant molecular beams 9, 11 and 12 are applied to a substrate crystal 20 mounted on a substrate holder 19 kept at a suitable temperature.
COPYRIGHT: (C)1982,JPO&Japio
JP8401381A 1981-06-01 1981-06-01 Preparation of compound semiconductor of groups 3[5 containing aluminum Pending JPS57200296A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8401381A JPS57200296A (en) 1981-06-01 1981-06-01 Preparation of compound semiconductor of groups 3[5 containing aluminum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8401381A JPS57200296A (en) 1981-06-01 1981-06-01 Preparation of compound semiconductor of groups 3[5 containing aluminum

Publications (1)

Publication Number Publication Date
JPS57200296A true JPS57200296A (en) 1982-12-08

Family

ID=13818692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8401381A Pending JPS57200296A (en) 1981-06-01 1981-06-01 Preparation of compound semiconductor of groups 3[5 containing aluminum

Country Status (1)

Country Link
JP (1) JPS57200296A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61146790A (en) * 1984-12-18 1986-07-04 Agency Of Ind Science & Technol Molecular beam epitaxial growth method
JPS63233097A (en) * 1986-10-22 1988-09-28 Hitachi Ltd Thin single crystal film
WO2004011701A1 (en) * 2002-07-30 2004-02-05 Veeco Instruments Inc. Dual chamber integrated phase separator for ultra high vacuum system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61146790A (en) * 1984-12-18 1986-07-04 Agency Of Ind Science & Technol Molecular beam epitaxial growth method
JPS63233097A (en) * 1986-10-22 1988-09-28 Hitachi Ltd Thin single crystal film
WO2004011701A1 (en) * 2002-07-30 2004-02-05 Veeco Instruments Inc. Dual chamber integrated phase separator for ultra high vacuum system

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