JPS57200296A - Preparation of compound semiconductor of groups 3[5 containing aluminum - Google Patents
Preparation of compound semiconductor of groups 3[5 containing aluminumInfo
- Publication number
- JPS57200296A JPS57200296A JP8401381A JP8401381A JPS57200296A JP S57200296 A JPS57200296 A JP S57200296A JP 8401381 A JP8401381 A JP 8401381A JP 8401381 A JP8401381 A JP 8401381A JP S57200296 A JPS57200296 A JP S57200296A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beams
- beams
- molecular
- electron
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE: To prepare an epitaxial crystal of high purity, in preparing the titled semiconductor crystal by the epitaxial growth method, by using molecular beams, obtaining Al molecular beams by the electron-beam vapor deposition method.
CONSTITUTION: In growing a Ga.As.Al compound semiconductor, a transverse type electron beam evaporating source is used to obtain Al molecular beams 9. An electric current is applied to a cathode filament 1 to withdraw electron rays, and an electric field is applied to take out electron beams 3, which are deflected by a magnetic pole 4 of a magnet and a deflecting magnetic coil 5 to irradiate only Al 8 in a molecular beam cell 7 cooled by cooling water 6 on the periphery thereof and generate Al molecular beams 9. The molecular beams 11 and 12 of Ga and As are generated by the resistance heating method. The resultant molecular beams 9, 11 and 12 are applied to a substrate crystal 20 mounted on a substrate holder 19 kept at a suitable temperature.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8401381A JPS57200296A (en) | 1981-06-01 | 1981-06-01 | Preparation of compound semiconductor of groups 3[5 containing aluminum |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8401381A JPS57200296A (en) | 1981-06-01 | 1981-06-01 | Preparation of compound semiconductor of groups 3[5 containing aluminum |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57200296A true JPS57200296A (en) | 1982-12-08 |
Family
ID=13818692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8401381A Pending JPS57200296A (en) | 1981-06-01 | 1981-06-01 | Preparation of compound semiconductor of groups 3[5 containing aluminum |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57200296A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61146790A (en) * | 1984-12-18 | 1986-07-04 | Agency Of Ind Science & Technol | Molecular beam epitaxial growth method |
JPS63233097A (en) * | 1986-10-22 | 1988-09-28 | Hitachi Ltd | Thin single crystal film |
WO2004011701A1 (en) * | 2002-07-30 | 2004-02-05 | Veeco Instruments Inc. | Dual chamber integrated phase separator for ultra high vacuum system |
-
1981
- 1981-06-01 JP JP8401381A patent/JPS57200296A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61146790A (en) * | 1984-12-18 | 1986-07-04 | Agency Of Ind Science & Technol | Molecular beam epitaxial growth method |
JPS63233097A (en) * | 1986-10-22 | 1988-09-28 | Hitachi Ltd | Thin single crystal film |
WO2004011701A1 (en) * | 2002-07-30 | 2004-02-05 | Veeco Instruments Inc. | Dual chamber integrated phase separator for ultra high vacuum system |
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