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Filing date
Publication date
Application filedfiledCritical
Priority to JP5032876ApriorityCriticalpatent/JPS52133759A/ja
Publication of JPS52133759ApublicationCriticalpatent/JPS52133759A/ja
Publication of JPS5719867B2publicationCriticalpatent/JPS5719867B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
H10D84/65—Integrated injection logic
Landscapes
Bipolar Transistors
(AREA)
Bipolar Integrated Circuits
(AREA)
JP5032876A1976-04-301976-04-30Production of semicondutor integrated circuit device
GrantedJPS52133759A
(en)