JPS57196461A - Electron-ray source for pattern formation - Google Patents
Electron-ray source for pattern formationInfo
- Publication number
- JPS57196461A JPS57196461A JP8076181A JP8076181A JPS57196461A JP S57196461 A JPS57196461 A JP S57196461A JP 8076181 A JP8076181 A JP 8076181A JP 8076181 A JP8076181 A JP 8076181A JP S57196461 A JPS57196461 A JP S57196461A
- Authority
- JP
- Japan
- Prior art keywords
- ray source
- light
- cathodes
- electron
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To enable a field-discharging-type electron-ray source to be applied to an exposure device or the like by making the voltage application to an anode or a cathode to be switched independently by controlling a photoconductive layer by irradiating light on desired parts of the said photoconductive layer. CONSTITUTION:A photoconductive layer 6 is prepared from antimony trisulfide, lead sulfide, cadmium sulfide or the like. As a conductive electrode 7 transmitting light, a thin film or the like of tin dioxide, titanium dioxide, gold or the like is used. In operating such an electron-ray source, light focused with an optical lens is projected from the side of the electrode 7 transmitting light toward the layer 6 adjacent to cathodes 3, and the resistance of the irradiated part of the layer 6 is reduced so as to make an emission current to be taken out of the extreme ends of the cathodes 3 by applying voltage across the cathodes 3 and an anode electrode 1 by making both the cathodes 3 and the electrode 7 transmitting light to conduct. Consequently, each electron-ray source of a high-density field-discharging-type electron-ray source matrix can be operated independently by the flickering of light. Besides, the emission current can be controlled according to the intensity of irradiated light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8076181A JPS57196461A (en) | 1981-05-29 | 1981-05-29 | Electron-ray source for pattern formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8076181A JPS57196461A (en) | 1981-05-29 | 1981-05-29 | Electron-ray source for pattern formation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57196461A true JPS57196461A (en) | 1982-12-02 |
JPS6367742B2 JPS6367742B2 (en) | 1988-12-27 |
Family
ID=13727394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8076181A Granted JPS57196461A (en) | 1981-05-29 | 1981-05-29 | Electron-ray source for pattern formation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57196461A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63269530A (en) * | 1987-04-28 | 1988-11-07 | Canon Inc | Charged particle beam device |
JPH07153655A (en) * | 1993-11-29 | 1995-06-16 | Nec Corp | Electron-beam aligner |
JPH07192682A (en) * | 1993-12-27 | 1995-07-28 | Agency Of Ind Science & Technol | Device and method for irradiation by multielectron beam |
JP2011181416A (en) * | 2010-03-02 | 2011-09-15 | Tohoku Univ | Light switching electron source and electron beam drawing device using the same |
-
1981
- 1981-05-29 JP JP8076181A patent/JPS57196461A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63269530A (en) * | 1987-04-28 | 1988-11-07 | Canon Inc | Charged particle beam device |
JPH07153655A (en) * | 1993-11-29 | 1995-06-16 | Nec Corp | Electron-beam aligner |
JPH07192682A (en) * | 1993-12-27 | 1995-07-28 | Agency Of Ind Science & Technol | Device and method for irradiation by multielectron beam |
JP2011181416A (en) * | 2010-03-02 | 2011-09-15 | Tohoku Univ | Light switching electron source and electron beam drawing device using the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6367742B2 (en) | 1988-12-27 |
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