JPS571936B2 - - Google Patents

Info

Publication number
JPS571936B2
JPS571936B2 JP8282273A JP8282273A JPS571936B2 JP S571936 B2 JPS571936 B2 JP S571936B2 JP 8282273 A JP8282273 A JP 8282273A JP 8282273 A JP8282273 A JP 8282273A JP S571936 B2 JPS571936 B2 JP S571936B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8282273A
Other languages
Japanese (ja)
Other versions
JPS5031757A (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8282273A priority Critical patent/JPS571936B2/ja
Priority to GB3169174A priority patent/GB1474999A/en
Priority to DE19742435237 priority patent/DE2435237A1/de
Priority to FR7425572A priority patent/FR2246070B1/fr
Publication of JPS5031757A publication Critical patent/JPS5031757A/ja
Priority to US05/858,014 priority patent/US4157557A/en
Publication of JPS571936B2 publication Critical patent/JPS571936B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/04Modifications of control circuit to reduce distortion caused by control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP8282273A 1973-07-23 1973-07-23 Expired JPS571936B2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP8282273A JPS571936B2 (fr) 1973-07-23 1973-07-23
GB3169174A GB1474999A (en) 1973-07-23 1974-07-17 Control circuits for signal transmission
DE19742435237 DE2435237A1 (de) 1973-07-23 1974-07-22 Steuerschaltung
FR7425572A FR2246070B1 (fr) 1973-07-23 1974-07-23
US05/858,014 US4157557A (en) 1973-07-23 1977-12-06 Control circuit for signal transmission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8282273A JPS571936B2 (fr) 1973-07-23 1973-07-23

Publications (2)

Publication Number Publication Date
JPS5031757A JPS5031757A (fr) 1975-03-28
JPS571936B2 true JPS571936B2 (fr) 1982-01-13

Family

ID=13785082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8282273A Expired JPS571936B2 (fr) 1973-07-23 1973-07-23

Country Status (4)

Country Link
JP (1) JPS571936B2 (fr)
DE (1) DE2435237A1 (fr)
FR (1) FR2246070B1 (fr)
GB (1) GB1474999A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2549610C2 (de) * 1975-11-05 1984-01-26 Standard Elektrik Lorenz Ag, 7000 Stuttgart Elektronisch regelbarer Widerstand

Also Published As

Publication number Publication date
JPS5031757A (fr) 1975-03-28
DE2435237A1 (de) 1975-02-13
FR2246070A1 (fr) 1975-04-25
FR2246070B1 (fr) 1978-11-24
GB1474999A (en) 1977-05-25

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