JPS5718757A - Preparation of high polymer semiconductor - Google Patents

Preparation of high polymer semiconductor

Info

Publication number
JPS5718757A
JPS5718757A JP9267480A JP9267480A JPS5718757A JP S5718757 A JPS5718757 A JP S5718757A JP 9267480 A JP9267480 A JP 9267480A JP 9267480 A JP9267480 A JP 9267480A JP S5718757 A JPS5718757 A JP S5718757A
Authority
JP
Japan
Prior art keywords
electron accepting
high polymer
polymer semiconductor
polyphenylenesulfide
cyano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9267480A
Other languages
Japanese (ja)
Inventor
Masao Kobayashi
Masaaki Kira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP9267480A priority Critical patent/JPS5718757A/en
Publication of JPS5718757A publication Critical patent/JPS5718757A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a high polymer semiconductor having improved oxidation stability in high productivity, by blending a polyphenylene-sulfide with a specific easily handleable electron accepting compound.
CONSTITUTION: A polyphenylenesulfide is blended with one or more electron accepting compounds selected from the group consisting of compounds shown by the formula I to formula III (R1WR2 are H, halogen, cyano, or nitro, with the proviso that R1WR4 and R9WR12 are not simultaneously H; W,X,Y, and Z are H, halogen, cyano, 1W5C alkyl or alkoxide), naphtoquinones, and their derivatives, molded and processed to give a P type semiconductor. 100pts.wt. polyphenylenesulfide is blended with 1W200pts.wt., preferably 5W100pts.wt. electron accepting compounds.
COPYRIGHT: (C)1982,JPO&Japio
JP9267480A 1980-07-09 1980-07-09 Preparation of high polymer semiconductor Pending JPS5718757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9267480A JPS5718757A (en) 1980-07-09 1980-07-09 Preparation of high polymer semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9267480A JPS5718757A (en) 1980-07-09 1980-07-09 Preparation of high polymer semiconductor

Publications (1)

Publication Number Publication Date
JPS5718757A true JPS5718757A (en) 1982-01-30

Family

ID=14061025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9267480A Pending JPS5718757A (en) 1980-07-09 1980-07-09 Preparation of high polymer semiconductor

Country Status (1)

Country Link
JP (1) JPS5718757A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886626A (en) * 1987-05-19 1989-12-12 Crest-Foam Corporation Conductive polyurethane foam compositions containing tetralyanoethylene and method
US5028355A (en) * 1987-05-19 1991-07-02 Crest-Foam Corporation Conductive polyurethane foam containing picric acid and analog thereof
JP2005525696A (en) * 2002-02-20 2005-08-25 ノヴァレッド・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Doped organic semiconductor material and method for producing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886626A (en) * 1987-05-19 1989-12-12 Crest-Foam Corporation Conductive polyurethane foam compositions containing tetralyanoethylene and method
US5028355A (en) * 1987-05-19 1991-07-02 Crest-Foam Corporation Conductive polyurethane foam containing picric acid and analog thereof
JP2005525696A (en) * 2002-02-20 2005-08-25 ノヴァレッド・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Doped organic semiconductor material and method for producing the same
US7858967B2 (en) 2002-02-20 2010-12-28 Novaled Ag Doped semiconductor material and process for production thereof

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