JPS5718757A - Preparation of high polymer semiconductor - Google Patents
Preparation of high polymer semiconductorInfo
- Publication number
- JPS5718757A JPS5718757A JP9267480A JP9267480A JPS5718757A JP S5718757 A JPS5718757 A JP S5718757A JP 9267480 A JP9267480 A JP 9267480A JP 9267480 A JP9267480 A JP 9267480A JP S5718757 A JPS5718757 A JP S5718757A
- Authority
- JP
- Japan
- Prior art keywords
- electron accepting
- high polymer
- polymer semiconductor
- polyphenylenesulfide
- cyano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a high polymer semiconductor having improved oxidation stability in high productivity, by blending a polyphenylene-sulfide with a specific easily handleable electron accepting compound.
CONSTITUTION: A polyphenylenesulfide is blended with one or more electron accepting compounds selected from the group consisting of compounds shown by the formula I to formula III (R1WR2 are H, halogen, cyano, or nitro, with the proviso that R1WR4 and R9WR12 are not simultaneously H; W,X,Y, and Z are H, halogen, cyano, 1W5C alkyl or alkoxide), naphtoquinones, and their derivatives, molded and processed to give a P type semiconductor. 100pts.wt. polyphenylenesulfide is blended with 1W200pts.wt., preferably 5W100pts.wt. electron accepting compounds.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9267480A JPS5718757A (en) | 1980-07-09 | 1980-07-09 | Preparation of high polymer semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9267480A JPS5718757A (en) | 1980-07-09 | 1980-07-09 | Preparation of high polymer semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5718757A true JPS5718757A (en) | 1982-01-30 |
Family
ID=14061025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9267480A Pending JPS5718757A (en) | 1980-07-09 | 1980-07-09 | Preparation of high polymer semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5718757A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4886626A (en) * | 1987-05-19 | 1989-12-12 | Crest-Foam Corporation | Conductive polyurethane foam compositions containing tetralyanoethylene and method |
US5028355A (en) * | 1987-05-19 | 1991-07-02 | Crest-Foam Corporation | Conductive polyurethane foam containing picric acid and analog thereof |
JP2005525696A (en) * | 2002-02-20 | 2005-08-25 | ノヴァレッド・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Doped organic semiconductor material and method for producing the same |
-
1980
- 1980-07-09 JP JP9267480A patent/JPS5718757A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4886626A (en) * | 1987-05-19 | 1989-12-12 | Crest-Foam Corporation | Conductive polyurethane foam compositions containing tetralyanoethylene and method |
US5028355A (en) * | 1987-05-19 | 1991-07-02 | Crest-Foam Corporation | Conductive polyurethane foam containing picric acid and analog thereof |
JP2005525696A (en) * | 2002-02-20 | 2005-08-25 | ノヴァレッド・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Doped organic semiconductor material and method for producing the same |
US7858967B2 (en) | 2002-02-20 | 2010-12-28 | Novaled Ag | Doped semiconductor material and process for production thereof |
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