JPS57176718A - Reduced pressure cvd device - Google Patents

Reduced pressure cvd device

Info

Publication number
JPS57176718A
JPS57176718A JP6290381A JP6290381A JPS57176718A JP S57176718 A JPS57176718 A JP S57176718A JP 6290381 A JP6290381 A JP 6290381A JP 6290381 A JP6290381 A JP 6290381A JP S57176718 A JPS57176718 A JP S57176718A
Authority
JP
Japan
Prior art keywords
barrier
wafer
adhered
tubular wall
reduced pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6290381A
Other languages
Japanese (ja)
Inventor
Kyohiko Kotani
Yoji Masuko
Hirozo Takano
Haruyuki Hoshika
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6290381A priority Critical patent/JPS57176718A/en
Publication of JPS57176718A publication Critical patent/JPS57176718A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To prevent broken pieces of a product dropping from a tubular wall from being adhered to a wafer by disposing a detachable barrier between a reaction tube and the wafer and energizing and heating the barrier. CONSTITUTION:A barrier 7 made of silicon carbide is provided between the tubular wall of a reaction tube 1 and a wafer 3, the barrier 7 is detachably supported on supports 8 provided at both end sides of a wafer holder 2, and energizing electrodes 10 are provided through leads 9 at both ends of the barrier 7. In this manner, the product dropping from the tubular wall is heated and adhered to the barrier 7. Accordingly, the product is not adhered to the wafer. Since the barrier is detachable, the barrier can be exchanged at every treatment and can be cleaned.
JP6290381A 1981-04-23 1981-04-23 Reduced pressure cvd device Pending JPS57176718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6290381A JPS57176718A (en) 1981-04-23 1981-04-23 Reduced pressure cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6290381A JPS57176718A (en) 1981-04-23 1981-04-23 Reduced pressure cvd device

Publications (1)

Publication Number Publication Date
JPS57176718A true JPS57176718A (en) 1982-10-30

Family

ID=13213671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6290381A Pending JPS57176718A (en) 1981-04-23 1981-04-23 Reduced pressure cvd device

Country Status (1)

Country Link
JP (1) JPS57176718A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1114799A1 (en) * 2000-01-05 2001-07-11 Lucent Technologies Inc. Process for heat treatment of a shaped article with gaseous reactants

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142173A (en) * 1977-05-18 1978-12-11 Kokusai Electric Co Ltd Method of growing reduced pressure gaseous phase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142173A (en) * 1977-05-18 1978-12-11 Kokusai Electric Co Ltd Method of growing reduced pressure gaseous phase

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1114799A1 (en) * 2000-01-05 2001-07-11 Lucent Technologies Inc. Process for heat treatment of a shaped article with gaseous reactants

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