JPS57155790A - Optical transmission module - Google Patents

Optical transmission module

Info

Publication number
JPS57155790A
JPS57155790A JP4031381A JP4031381A JPS57155790A JP S57155790 A JPS57155790 A JP S57155790A JP 4031381 A JP4031381 A JP 4031381A JP 4031381 A JP4031381 A JP 4031381A JP S57155790 A JPS57155790 A JP S57155790A
Authority
JP
Japan
Prior art keywords
holding plates
optical transmission
transmission module
support base
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4031381A
Other languages
Japanese (ja)
Inventor
Masaaki Sawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4031381A priority Critical patent/JPS57155790A/en
Publication of JPS57155790A publication Critical patent/JPS57155790A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4056Edge-emitting structures emitting light in more than one direction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To radiate laser beams in multiple directions by mounting semiconductor laser elements on respective holding plates of a support base which has multi-stage holding plates. CONSTITUTION:The semiconductor laser elements 8 are mounted on respective holding plates of the support base 7 which is equipped with multi-stage holding plates 6 in such a manner as each element can radiate laser beams in different direction each other. This feature allows laser radiation to be performed in multiple directions and makes frequency division multiplex communication possible when laser diodes of different wave lengths are used.
JP4031381A 1981-03-23 1981-03-23 Optical transmission module Pending JPS57155790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4031381A JPS57155790A (en) 1981-03-23 1981-03-23 Optical transmission module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4031381A JPS57155790A (en) 1981-03-23 1981-03-23 Optical transmission module

Publications (1)

Publication Number Publication Date
JPS57155790A true JPS57155790A (en) 1982-09-25

Family

ID=12577121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4031381A Pending JPS57155790A (en) 1981-03-23 1981-03-23 Optical transmission module

Country Status (1)

Country Link
JP (1) JPS57155790A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181084A (en) * 1983-03-30 1984-10-15 Fujitsu Ltd Semiconductor laser device
JPS59181587A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor laser element and manufacture thereof
US5099488A (en) * 1991-03-27 1992-03-24 Spectra Diode Laboratories, Inc. Ribbed submounts for two dimensional stacked laser array
US5324387A (en) * 1993-05-07 1994-06-28 Xerox Corporation Method of fabricating asymmetric closely-spaced multiple diode lasers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181084A (en) * 1983-03-30 1984-10-15 Fujitsu Ltd Semiconductor laser device
JPS59181587A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor laser element and manufacture thereof
JPH0437598B2 (en) * 1983-03-31 1992-06-19 Fujitsu Ltd
US5099488A (en) * 1991-03-27 1992-03-24 Spectra Diode Laboratories, Inc. Ribbed submounts for two dimensional stacked laser array
US5324387A (en) * 1993-05-07 1994-06-28 Xerox Corporation Method of fabricating asymmetric closely-spaced multiple diode lasers

Similar Documents

Publication Publication Date Title
EP0259888A3 (en) Semiconductor laser module
DE3582480D1 (en) SEMICONDUCTOR MODULE ASSEMBLY HIGH DENSITY.
GB2184289B (en) Semiconductor laser module
DE58907758D1 (en) Planar pn junction with high dielectric strength.
EP0427143A3 (en) Semiconductor power module
GB2234088B (en) Optical semiconductor module
DE2965795D1 (en) Cooling structure for a semiconductor module
MX157997A (en) PHOTOVOLTAIC CELL MODULE
FR2550385B1 (en) SOLAR MODULE
DE69325232D1 (en) Power semiconductor module
GB8709312D0 (en) Semiconductor diode laser array
EP0196054A3 (en) Semiconductor module cooling structure
GB8311490D0 (en) Distributed feedback semiconductor laser
DE3770847D1 (en) SEMICONDUCTOR ARRANGEMENT WITH AN ENCLOSURE PACK.
DE3851077D1 (en) Cooling system for semiconductor component modules.
AU562971B2 (en) Light modulation using semiconductor waveguides
IT207952Z2 (en) LIGHTING EQUIPMENT WITH ASYMMETRIC LIGHT BEAM.
IT8741605A0 (en) TWO-AXIS OPTICAL WRIST FOR LASER APPLICATIONS.
DE3850890D1 (en) Optical semiconductor module.
EP0446070A3 (en) Multiple wavelength semiconductor lasers
GB2114804B (en) Distributed feedback semiconductor laser
ES2024660B3 (en) POWER MODULE FOR AUTOMOBILE EQUIPMENT.
JPS57155790A (en) Optical transmission module
DE69017322D1 (en) Module type semiconductor device of high power capacity.
DE3775812D1 (en) HIGH EFFICIENCY ANTENNA.