JPS57134855U - - Google Patents

Info

Publication number
JPS57134855U
JPS57134855U JP2120281U JP2120281U JPS57134855U JP S57134855 U JPS57134855 U JP S57134855U JP 2120281 U JP2120281 U JP 2120281U JP 2120281 U JP2120281 U JP 2120281U JP S57134855 U JPS57134855 U JP S57134855U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2120281U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2120281U priority Critical patent/JPS57134855U/ja
Publication of JPS57134855U publication Critical patent/JPS57134855U/ja
Pending legal-status Critical Current

Links

JP2120281U 1981-02-17 1981-02-17 Pending JPS57134855U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2120281U JPS57134855U (en) 1981-02-17 1981-02-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2120281U JPS57134855U (en) 1981-02-17 1981-02-17

Publications (1)

Publication Number Publication Date
JPS57134855U true JPS57134855U (en) 1982-08-23

Family

ID=29819086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2120281U Pending JPS57134855U (en) 1981-02-17 1981-02-17

Country Status (1)

Country Link
JP (1) JPS57134855U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153368A (en) * 1982-03-09 1983-09-12 Toshiba Corp Insulated gate field effect transistor
JPS60196974A (en) * 1984-03-19 1985-10-05 Toshiba Corp Conduction modulation type mosfet
JPH02100365A (en) * 1988-10-07 1990-04-12 Fuji Electric Co Ltd Manufacture of conductivity modulation type mosfet
JPH02150037A (en) * 1988-12-01 1990-06-08 Fuji Electric Co Ltd Manufacture of semiconductor device
JP2010141339A (en) * 2008-12-12 2010-06-24 Abb Technology Ag Method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5175997A (en) * 1974-12-27 1976-06-30 Toyo Ink Mfg Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5175997A (en) * 1974-12-27 1976-06-30 Toyo Ink Mfg Co

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153368A (en) * 1982-03-09 1983-09-12 Toshiba Corp Insulated gate field effect transistor
JPS60196974A (en) * 1984-03-19 1985-10-05 Toshiba Corp Conduction modulation type mosfet
JPH02100365A (en) * 1988-10-07 1990-04-12 Fuji Electric Co Ltd Manufacture of conductivity modulation type mosfet
JPH02150037A (en) * 1988-12-01 1990-06-08 Fuji Electric Co Ltd Manufacture of semiconductor device
JP2010141339A (en) * 2008-12-12 2010-06-24 Abb Technology Ag Method for manufacturing semiconductor device

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