JPS5712558Y2 - - Google Patents
Info
- Publication number
- JPS5712558Y2 JPS5712558Y2 JP7719977U JP7719977U JPS5712558Y2 JP S5712558 Y2 JPS5712558 Y2 JP S5712558Y2 JP 7719977 U JP7719977 U JP 7719977U JP 7719977 U JP7719977 U JP 7719977U JP S5712558 Y2 JPS5712558 Y2 JP S5712558Y2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Details Of Measuring Devices (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7719977U JPS5712558Y2 (https=) | 1977-06-15 | 1977-06-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7719977U JPS5712558Y2 (https=) | 1977-06-15 | 1977-06-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS546083U JPS546083U (https=) | 1979-01-16 |
| JPS5712558Y2 true JPS5712558Y2 (https=) | 1982-03-12 |
Family
ID=28993175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7719977U Expired JPS5712558Y2 (https=) | 1977-06-15 | 1977-06-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712558Y2 (https=) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7253042B2 (en) | 2001-09-07 | 2007-08-07 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor with an extended drain structure |
| US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
| US7557406B2 (en) | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
| US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
| US9543396B2 (en) | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
-
1977
- 1977-06-15 JP JP7719977U patent/JPS5712558Y2/ja not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221011B2 (en) | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7253042B2 (en) | 2001-09-07 | 2007-08-07 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor with an extended drain structure |
| US7459366B2 (en) | 2001-09-07 | 2008-12-02 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
| US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
| US7557406B2 (en) | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
| US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
| US9543396B2 (en) | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS546083U (https=) | 1979-01-16 |