JPS57118630A - Evaporating device - Google Patents
Evaporating deviceInfo
- Publication number
- JPS57118630A JPS57118630A JP526781A JP526781A JPS57118630A JP S57118630 A JPS57118630 A JP S57118630A JP 526781 A JP526781 A JP 526781A JP 526781 A JP526781 A JP 526781A JP S57118630 A JPS57118630 A JP S57118630A
- Authority
- JP
- Japan
- Prior art keywords
- fine particles
- detected
- pulse
- reaction space
- size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001704 evaporation Methods 0.000 title abstract 3
- 239000010419 fine particle Substances 0.000 abstract 6
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP526781A JPS57118630A (en) | 1981-01-16 | 1981-01-16 | Evaporating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP526781A JPS57118630A (en) | 1981-01-16 | 1981-01-16 | Evaporating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57118630A true JPS57118630A (en) | 1982-07-23 |
| JPH0474857B2 JPH0474857B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-11-27 |
Family
ID=11606448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP526781A Granted JPS57118630A (en) | 1981-01-16 | 1981-01-16 | Evaporating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57118630A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216515A (ja) * | 1985-07-16 | 1987-01-24 | Ulvac Corp | プラズマ装置用監視装置 |
| US6576559B2 (en) | 1998-03-04 | 2003-06-10 | Hitachi, Ltd. | Semiconductor manufacturing methods, plasma processing methods and plasma processing apparatuses |
| US6613588B2 (en) | 1999-03-02 | 2003-09-02 | Hitachi, Ltd. | Floating particle inspection method and its apparatus and a semiconductor device processing apparatus |
| US6712928B2 (en) | 2000-08-07 | 2004-03-30 | Hitachi, Ltd. | Method and its apparatus for detecting floating particles in a plasma processing chamber and an apparatus for processing a semiconductor device |
| US6778272B2 (en) | 1999-03-02 | 2004-08-17 | Renesas Technology Corp. | Method of processing a semiconductor device |
| US7175875B2 (en) | 2002-02-15 | 2007-02-13 | Hitachi, Ltd. | Method and apparatus for plasma processing |
| US7355143B1 (en) | 1999-01-11 | 2008-04-08 | Hitachi, Ltd. | Circuit board production method and its apparatus |
| WO2011127370A1 (en) * | 2010-04-09 | 2011-10-13 | First Solar, Inc. | Particle detector |
| CN115440557A (zh) * | 2021-06-01 | 2022-12-06 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置和颗粒污染物的监测方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54146957A (en) * | 1978-05-10 | 1979-11-16 | Hitachi Ltd | Doping gas cntrol method in semiconductor process |
| JPS5518783A (en) * | 1978-07-25 | 1980-02-09 | Sharp Corp | Electronic apparatus with function of counting number of issued slip |
-
1981
- 1981-01-16 JP JP526781A patent/JPS57118630A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54146957A (en) * | 1978-05-10 | 1979-11-16 | Hitachi Ltd | Doping gas cntrol method in semiconductor process |
| JPS5518783A (en) * | 1978-07-25 | 1980-02-09 | Sharp Corp | Electronic apparatus with function of counting number of issued slip |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6216515A (ja) * | 1985-07-16 | 1987-01-24 | Ulvac Corp | プラズマ装置用監視装置 |
| US6576559B2 (en) | 1998-03-04 | 2003-06-10 | Hitachi, Ltd. | Semiconductor manufacturing methods, plasma processing methods and plasma processing apparatuses |
| US7355143B1 (en) | 1999-01-11 | 2008-04-08 | Hitachi, Ltd. | Circuit board production method and its apparatus |
| US6613588B2 (en) | 1999-03-02 | 2003-09-02 | Hitachi, Ltd. | Floating particle inspection method and its apparatus and a semiconductor device processing apparatus |
| US6778272B2 (en) | 1999-03-02 | 2004-08-17 | Renesas Technology Corp. | Method of processing a semiconductor device |
| US6712928B2 (en) | 2000-08-07 | 2004-03-30 | Hitachi, Ltd. | Method and its apparatus for detecting floating particles in a plasma processing chamber and an apparatus for processing a semiconductor device |
| US7175875B2 (en) | 2002-02-15 | 2007-02-13 | Hitachi, Ltd. | Method and apparatus for plasma processing |
| WO2011127370A1 (en) * | 2010-04-09 | 2011-10-13 | First Solar, Inc. | Particle detector |
| US8472021B2 (en) | 2010-04-09 | 2013-06-25 | First Solar, Inc. | Particle detector |
| CN115440557A (zh) * | 2021-06-01 | 2022-12-06 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置和颗粒污染物的监测方法 |
| CN115440557B (zh) * | 2021-06-01 | 2025-05-09 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置和颗粒污染物的监测方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0474857B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-11-27 |
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