JPS571151B2 - - Google Patents

Info

Publication number
JPS571151B2
JPS571151B2 JP12712774A JP12712774A JPS571151B2 JP S571151 B2 JPS571151 B2 JP S571151B2 JP 12712774 A JP12712774 A JP 12712774A JP 12712774 A JP12712774 A JP 12712774A JP S571151 B2 JPS571151 B2 JP S571151B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12712774A
Other versions
JPS5153493A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12712774A priority Critical patent/JPS571151B2/ja
Priority to GB45058/75A priority patent/GB1518709A/en
Priority to DE2549181A priority patent/DE2549181C3/de
Publication of JPS5153493A publication Critical patent/JPS5153493A/ja
Publication of JPS571151B2 publication Critical patent/JPS571151B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00—Compounds of cadmium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP12712774A 1974-11-06 1974-11-06 Expired JPS571151B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12712774A JPS571151B2 (ja) 1974-11-06 1974-11-06
GB45058/75A GB1518709A (en) 1974-11-06 1975-10-30 Process for preparation of photoconductive powder of cadmiium sulphide type materials
DE2549181A DE2549181C3 (de) 1974-11-06 1975-11-03 Verfahren zur Herstellung eines photoleitfähigen Pulvers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12712774A JPS571151B2 (ja) 1974-11-06 1974-11-06

Publications (2)

Publication Number Publication Date
JPS5153493A JPS5153493A (ja) 1976-05-11
JPS571151B2 true JPS571151B2 (ja) 1982-01-09

Family

ID=14952266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12712774A Expired JPS571151B2 (ja) 1974-11-06 1974-11-06

Country Status (3)

Country Link
JP (1) JPS571151B2 (ja)
DE (1) DE2549181C3 (ja)
GB (1) GB1518709A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433034A (en) * 1977-08-19 1979-03-10 Dainichiseika Color Chem Photoconductive inorganic material
JPS57129825A (en) * 1981-01-28 1982-08-12 Canon Inc Manufacture of photoconductive cadmium sulfide
EP0099860A3 (de) * 1982-07-21 1986-04-09 Ciba-Geigy Ag Verfahren zur thermischen Behandlung von Halbleiterpulvern
CN102222705A (zh) * 2010-04-14 2011-10-19 上海大洲电子材料有限公司 一种无铅环保银浆料及硅太阳能电池背面电极的形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2226573A (en) * 1938-01-29 1940-12-31 Glidden Co Process of making cadmium red pigment
DE1063304B (de) * 1956-07-02 1959-08-13 Bayer Ag Verfahren zur Herstellung anorganischer Pigmente
US3694201A (en) * 1971-01-06 1972-09-26 Xerox Corp Method for photoconductive powder

Also Published As

Publication number Publication date
DE2549181C3 (de) 1982-12-23
GB1518709A (en) 1978-07-26
DE2549181A1 (de) 1976-05-13
DE2549181B2 (de) 1977-10-27
JPS5153493A (ja) 1976-05-11

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