JPS5711150B2 - - Google Patents
Info
- Publication number
- JPS5711150B2 JPS5711150B2 JP5820075A JP5820075A JPS5711150B2 JP S5711150 B2 JPS5711150 B2 JP S5711150B2 JP 5820075 A JP5820075 A JP 5820075A JP 5820075 A JP5820075 A JP 5820075A JP S5711150 B2 JPS5711150 B2 JP S5711150B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50058200A JPS51134074A (en) | 1975-05-15 | 1975-05-15 | Method to manufacture the semiconductor unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50058200A JPS51134074A (en) | 1975-05-15 | 1975-05-15 | Method to manufacture the semiconductor unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51134074A JPS51134074A (en) | 1976-11-20 |
| JPS5711150B2 true JPS5711150B2 (en) | 1982-03-02 |
Family
ID=13077375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50058200A Granted JPS51134074A (en) | 1975-05-15 | 1975-05-15 | Method to manufacture the semiconductor unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51134074A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985003597A1 (en) * | 1984-02-03 | 1985-08-15 | Advanced Micro Devices, Inc. | A bipolar transistor with active elements formed in slots |
| EP0316562A2 (en) * | 1987-11-19 | 1989-05-24 | Texas Instruments Incorporated | Semiconductor bipolar transistors with base and emitter structures in a trench and process to produce same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57201070A (en) * | 1981-06-05 | 1982-12-09 | Seiko Epson Corp | Semiconductor device |
-
1975
- 1975-05-15 JP JP50058200A patent/JPS51134074A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985003597A1 (en) * | 1984-02-03 | 1985-08-15 | Advanced Micro Devices, Inc. | A bipolar transistor with active elements formed in slots |
| EP0316562A2 (en) * | 1987-11-19 | 1989-05-24 | Texas Instruments Incorporated | Semiconductor bipolar transistors with base and emitter structures in a trench and process to produce same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51134074A (en) | 1976-11-20 |