JPS57106116A - Method for molecular beam epitaxial growth - Google Patents

Method for molecular beam epitaxial growth

Info

Publication number
JPS57106116A
JPS57106116A JP18344380A JP18344380A JPS57106116A JP S57106116 A JPS57106116 A JP S57106116A JP 18344380 A JP18344380 A JP 18344380A JP 18344380 A JP18344380 A JP 18344380A JP S57106116 A JPS57106116 A JP S57106116A
Authority
JP
Japan
Prior art keywords
substrate
chamber
molecular beam
molecules
low volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18344380A
Other languages
Japanese (ja)
Inventor
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18344380A priority Critical patent/JPS57106116A/en
Publication of JPS57106116A publication Critical patent/JPS57106116A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To grow a desired compound semiconductor in a part in which low volatile molecules are not deposited by forming high volatile molecule atmosphere in a growing chamber, thereby removing the part in which the low volatile molecules are not deposited. CONSTITUTION:A molecular beam epitaxial growing chamber (MBE chamber) 10 is evacuated in high vacuum by an ultrahigh vacuum evacuation system 12, and a GaAs substrate 13 is heated and held by a substrate holder 20. The As of high volatile element is heated to emit the As from the nozzle 14' if an As supply source 14, and As atmosphere 14'' is filled in the chamber 10. Then, the Ga of low volatile element is emitted as Ga molecular beam 17 to the substrate 13 by opening a shutter before a Ga emission cell 15. The surface of the substrate is always surrounded by the As molecles which reach the surface of the substrate by the thermal motion and the Ga molecules in the Ga molecle reaching part on the substrate are all reacted with the As, thereby growing GaAs crystal.
JP18344380A 1980-12-24 1980-12-24 Method for molecular beam epitaxial growth Pending JPS57106116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18344380A JPS57106116A (en) 1980-12-24 1980-12-24 Method for molecular beam epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18344380A JPS57106116A (en) 1980-12-24 1980-12-24 Method for molecular beam epitaxial growth

Publications (1)

Publication Number Publication Date
JPS57106116A true JPS57106116A (en) 1982-07-01

Family

ID=16135851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18344380A Pending JPS57106116A (en) 1980-12-24 1980-12-24 Method for molecular beam epitaxial growth

Country Status (1)

Country Link
JP (1) JPS57106116A (en)

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