JPS5683069A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5683069A JPS5683069A JP15806580A JP15806580A JPS5683069A JP S5683069 A JPS5683069 A JP S5683069A JP 15806580 A JP15806580 A JP 15806580A JP 15806580 A JP15806580 A JP 15806580A JP S5683069 A JPS5683069 A JP S5683069A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792945391 DE2945391A1 (de) | 1979-11-09 | 1979-11-09 | Thyristor mit einem abschaltbaren emitter-kurzschluss |
DE2945391.6 | 1979-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5683069A true JPS5683069A (en) | 1981-07-07 |
JPS6043036B2 JPS6043036B2 (ja) | 1985-09-26 |
Family
ID=6085631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15806580A Expired JPS6043036B2 (ja) | 1979-11-09 | 1980-11-10 | サイリスタ |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS6043036B2 (ja) |
DE (1) | DE2945391A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3118353A1 (de) * | 1979-11-09 | 1982-12-09 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit abschaltbarem emitter-kurzschluss |
DE3112940A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb |
FR2536909A1 (fr) * | 1982-11-25 | 1984-06-01 | Centre Nat Rech Scient | Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel |
JPS61285821A (ja) * | 1985-06-11 | 1986-12-16 | シ−メンス、アクチエンゲゼルシヤフト | 電子スイツチ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (ja) * | 1962-06-11 | |||
DE1564185B2 (de) * | 1966-09-22 | 1972-11-23 | International Rectifier Corp., El Segundo, Calif. (V.St A.) | Schaltungsanordnung fuer einen steuerbaren halbleitergleichrichter sowie steuerbare halbleitergleichrichter hierzu |
DE2201041C3 (de) * | 1972-01-11 | 1980-08-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
-
1979
- 1979-11-09 DE DE19792945391 patent/DE2945391A1/de not_active Withdrawn
-
1980
- 1980-11-10 JP JP15806580A patent/JPS6043036B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2945391A1 (de) | 1981-05-21 |
JPS6043036B2 (ja) | 1985-09-26 |
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