JPS567312A - Contact driving device - Google Patents
Contact driving deviceInfo
- Publication number
- JPS567312A JPS567312A JP8276979A JP8276979A JPS567312A JP S567312 A JPS567312 A JP S567312A JP 8276979 A JP8276979 A JP 8276979A JP 8276979 A JP8276979 A JP 8276979A JP S567312 A JPS567312 A JP S567312A
- Authority
- JP
- Japan
- Prior art keywords
- driving device
- contact driving
- contact
- driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Push-Button Switches (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8276979A JPS5856443B2 (en) | 1979-06-30 | 1979-06-30 | Contact drive device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8276979A JPS5856443B2 (en) | 1979-06-30 | 1979-06-30 | Contact drive device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS567312A true JPS567312A (en) | 1981-01-26 |
JPS5856443B2 JPS5856443B2 (en) | 1983-12-15 |
Family
ID=13783634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8276979A Expired JPS5856443B2 (en) | 1979-06-30 | 1979-06-30 | Contact drive device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5856443B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075746A (en) * | 1988-07-19 | 1991-12-24 | Agency Of Industrial Science And Technology | Thin film field effect transistor and a method of manufacturing the same |
US5208476A (en) * | 1990-06-08 | 1993-05-04 | Seiko Epson Corporation | Low leakage current offset-gate thin film transistor structure |
-
1979
- 1979-06-30 JP JP8276979A patent/JPS5856443B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075746A (en) * | 1988-07-19 | 1991-12-24 | Agency Of Industrial Science And Technology | Thin film field effect transistor and a method of manufacturing the same |
US5208476A (en) * | 1990-06-08 | 1993-05-04 | Seiko Epson Corporation | Low leakage current offset-gate thin film transistor structure |
Also Published As
Publication number | Publication date |
---|---|
JPS5856443B2 (en) | 1983-12-15 |
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