JPS5658595U - - Google Patents
Info
- Publication number
- JPS5658595U JPS5658595U JP1979139154U JP13915479U JPS5658595U JP S5658595 U JPS5658595 U JP S5658595U JP 1979139154 U JP1979139154 U JP 1979139154U JP 13915479 U JP13915479 U JP 13915479U JP S5658595 U JPS5658595 U JP S5658595U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04G—ELECTRONIC TIME-PIECES
- G04G19/00—Electric power supply circuits specially adapted for use in electronic time-pieces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromechanical Clocks (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electric Clocks (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979139154U JPS5658595U (en:Method) | 1979-10-09 | 1979-10-09 | |
| US06/192,714 US4388001A (en) | 1979-10-09 | 1980-10-01 | Electronic timepiece |
| GB8032191A GB2062303B (en) | 1979-10-09 | 1980-10-07 | Electronic timepiece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979139154U JPS5658595U (en:Method) | 1979-10-09 | 1979-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5658595U true JPS5658595U (en:Method) | 1981-05-20 |
Family
ID=15238819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979139154U Pending JPS5658595U (en:Method) | 1979-10-09 | 1979-10-09 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4388001A (en:Method) |
| JP (1) | JPS5658595U (en:Method) |
| GB (1) | GB2062303B (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010095003A1 (en) * | 2009-02-23 | 2010-08-26 | Freescale Semiconductor, Inc. | Semiconductor device with appraisal circuitry |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1001908A (en) * | 1962-08-31 | 1965-08-18 | Texas Instruments Inc | Semiconductor devices |
| GB1095413A (en:Method) * | 1964-12-24 | |||
| US4070748A (en) * | 1972-04-10 | 1978-01-31 | Raytheon Company | Integrated circuit structure having semiconductor resistance regions |
| US4203126A (en) * | 1975-11-13 | 1980-05-13 | Siliconix, Inc. | CMOS structure and method utilizing retarded electric field for minimum latch-up |
| US4167804A (en) * | 1976-12-13 | 1979-09-18 | General Motors Corporation | Integrated circuit process compatible surge protection resistor |
-
1979
- 1979-10-09 JP JP1979139154U patent/JPS5658595U/ja active Pending
-
1980
- 1980-10-01 US US06/192,714 patent/US4388001A/en not_active Expired - Lifetime
- 1980-10-07 GB GB8032191A patent/GB2062303B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2062303A (en) | 1981-05-20 |
| US4388001A (en) | 1983-06-14 |
| GB2062303B (en) | 1983-06-02 |