JPS56501227A - - Google Patents

Info

Publication number
JPS56501227A
JPS56501227A JP50216080A JP50216080A JPS56501227A JP S56501227 A JPS56501227 A JP S56501227A JP 50216080 A JP50216080 A JP 50216080A JP 50216080 A JP50216080 A JP 50216080A JP S56501227 A JPS56501227 A JP S56501227A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50216080A
Other languages
Japanese (ja)
Other versions
JPH0139206B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56501227A publication Critical patent/JPS56501227A/ja
Publication of JPH0139206B2 publication Critical patent/JPH0139206B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP55502160A 1979-09-27 1980-08-22 Expired JPH0139206B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/079,451 US4366186A (en) 1979-09-27 1979-09-27 Ohmic contact to p-type InP

Publications (2)

Publication Number Publication Date
JPS56501227A true JPS56501227A (enExample) 1981-08-27
JPH0139206B2 JPH0139206B2 (enExample) 1989-08-18

Family

ID=22150652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55502160A Expired JPH0139206B2 (enExample) 1979-09-27 1980-08-22

Country Status (5)

Country Link
US (1) US4366186A (enExample)
EP (1) EP0037401B1 (enExample)
JP (1) JPH0139206B2 (enExample)
DE (1) DE3071336D1 (enExample)
WO (1) WO1981000932A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
US4471005A (en) * 1983-01-24 1984-09-11 At&T Bell Laboratories Ohmic contact to p-type Group III-V semiconductors
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
US5015603A (en) * 1988-06-17 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy TiW diffusion barrier for AuZn ohmic contact to P-Type InP
US5036023A (en) * 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
JPH03137081A (ja) * 1989-10-23 1991-06-11 Sumitomo Electric Ind Ltd p型cBNのオーム性電極形成方法
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd n型立方晶窒化硼素のオーム性電極及びその形成方法
JPH04154511A (ja) * 1990-10-15 1992-05-27 Kawasaki Steel Corp リングの包装方法と包装装置
US5100835A (en) * 1991-03-18 1992-03-31 Eastman Kodak Company Shallow ohmic contacts to N-GaAs
TW456058B (en) * 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
US9065010B2 (en) * 2011-06-28 2015-06-23 Universal Display Corporation Non-planar inorganic optoelectronic device fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146180A (en) * 1975-06-11 1976-12-15 Mitsubishi Electric Corp Iii-v family compound semi-conductor electric pole formation
JPS5348670A (en) * 1976-10-15 1978-05-02 Toshiba Corp Electrode structure of semiconductor element

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies
NL132844C (enExample) * 1961-04-14
US3942244A (en) * 1967-11-24 1976-03-09 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor element
US3598997A (en) * 1968-07-05 1971-08-10 Gen Electric Schottky barrier atomic particle and x-ray detector
US3620847A (en) * 1969-05-05 1971-11-16 Us Air Force Silicon solar cell array hardened to space nuclear blast radiation
US3616406A (en) * 1969-11-03 1971-10-26 Bell Telephone Labor Inc Preparation of glue layer for bonding gold to a substrate
CA926030A (en) * 1970-05-05 1973-05-08 Mayer Alfred Connections for high temperature power rectifier
US3768151A (en) * 1970-11-03 1973-10-30 Ibm Method of forming ohmic contacts to semiconductors
US3850688A (en) * 1971-12-29 1974-11-26 Gen Electric Ohmic contact for p-type group iii-v semiconductors
JPS539712B2 (enExample) * 1972-05-18 1978-04-07
FR2230078B1 (enExample) * 1973-05-18 1977-07-29 Radiotechnique Compelec
US4022931A (en) * 1974-07-01 1977-05-10 Motorola, Inc. Process for making semiconductor device
US4011583A (en) * 1974-09-03 1977-03-08 Bell Telephone Laboratories, Incorporated Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
US4068022A (en) * 1974-12-10 1978-01-10 Western Electric Company, Inc. Methods of strengthening bonds
US4064621A (en) * 1976-09-16 1977-12-27 General Motors Corporation Cadmium diffused Pb1-x Snx Te diode laser
GB1574525A (en) * 1977-04-13 1980-09-10 Philips Electronic Associated Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method
US4258375A (en) * 1979-04-09 1981-03-24 Massachusetts Institute Of Technology Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication
US4260429A (en) * 1980-05-19 1981-04-07 Ses, Incorporated Electrode for photovoltaic cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146180A (en) * 1975-06-11 1976-12-15 Mitsubishi Electric Corp Iii-v family compound semi-conductor electric pole formation
JPS5348670A (en) * 1976-10-15 1978-05-02 Toshiba Corp Electrode structure of semiconductor element

Also Published As

Publication number Publication date
EP0037401A1 (en) 1981-10-14
WO1981000932A1 (en) 1981-04-02
EP0037401B1 (en) 1986-01-08
DE3071336D1 (en) 1986-02-20
US4366186A (en) 1982-12-28
JPH0139206B2 (enExample) 1989-08-18
EP0037401A4 (en) 1983-07-26

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