JPS56501028A - - Google Patents
Info
- Publication number
- JPS56501028A JPS56501028A JP50199380A JP50199380A JPS56501028A JP S56501028 A JPS56501028 A JP S56501028A JP 50199380 A JP50199380 A JP 50199380A JP 50199380 A JP50199380 A JP 50199380A JP S56501028 A JPS56501028 A JP S56501028A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6580679A | 1979-08-13 | 1979-08-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56501028A true JPS56501028A (en) | 1981-07-23 |
Family
ID=22065234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50199380A Pending JPS56501028A (en) | 1979-08-13 | 1980-08-07 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0034168A4 (en) |
| JP (1) | JPS56501028A (en) |
| WO (1) | WO1981000487A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448633A (en) * | 1982-11-29 | 1984-05-15 | United Technologies Corporation | Passivation of III-V semiconductor surfaces by plasma nitridation |
| GB2229575B (en) * | 1989-03-22 | 1993-05-12 | Intel Corp | Method of reducing hot-electron degradation in semiconductor devices |
| US5229311A (en) * | 1989-03-22 | 1993-07-20 | Intel Corporation | Method of reducing hot-electron degradation in semiconductor devices |
| WO1991011022A1 (en) * | 1990-01-10 | 1991-07-25 | Australian Nuclear Science & Technology Organisation | Purification of semiconductor material |
| JP3516596B2 (en) | 1998-10-19 | 2004-04-05 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| CN102800584A (en) * | 2012-08-29 | 2012-11-28 | 上海宏力半导体制造有限公司 | Method for improving reliability of SONOS flash memory |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
| US3556880A (en) * | 1968-04-11 | 1971-01-19 | Rca Corp | Method of treating semiconductor devices to improve lifetime |
| US3615873A (en) * | 1969-06-03 | 1971-10-26 | Sprague Electric Co | Method of stabilizing mos devices |
| US3719866A (en) * | 1970-12-03 | 1973-03-06 | Ncr | Semiconductor memory device |
| US3867196A (en) * | 1974-03-11 | 1975-02-18 | Smc Microsystems Corp | Method for selectively establishing regions of different surface charge densities in a silicon wafer |
| US4027380A (en) * | 1974-06-03 | 1977-06-07 | Fairchild Camera And Instrument Corporation | Complementary insulated gate field effect transistor structure and process for fabricating the structure |
| US4057821A (en) * | 1975-11-20 | 1977-11-08 | Nitron Corporation/Mcdonnell-Douglas Corporation | Non-volatile semiconductor memory device |
| US4097314A (en) * | 1976-12-30 | 1978-06-27 | Rca Corp. | Method of making a sapphire gate transistor |
| US4151007A (en) * | 1977-10-11 | 1979-04-24 | Bell Telephone Laboratories, Incorporated | Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures |
| NL7902247A (en) * | 1978-03-25 | 1979-09-27 | Fujitsu Ltd | METAL INSULATOR SEMICONDUCTOR TYPE SEMICONDUCTOR DEVICE AND PROCEDURE FOR MANUFACTURING IT. |
| JPS5530846A (en) * | 1978-08-28 | 1980-03-04 | Hitachi Ltd | Method for manufacturing fixed memory |
-
1980
- 1980-08-07 JP JP50199380A patent/JPS56501028A/ja active Pending
- 1980-08-07 WO PCT/US1980/001020 patent/WO1981000487A1/en not_active Application Discontinuation
-
1981
- 1981-02-24 EP EP19800901693 patent/EP0034168A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0034168A4 (en) | 1981-12-10 |
| WO1981000487A1 (en) | 1981-02-19 |
| EP0034168A1 (en) | 1981-08-26 |