JPS5645091A - Temperature stabilizing laser device - Google Patents
Temperature stabilizing laser deviceInfo
- Publication number
- JPS5645091A JPS5645091A JP12069579A JP12069579A JPS5645091A JP S5645091 A JPS5645091 A JP S5645091A JP 12069579 A JP12069579 A JP 12069579A JP 12069579 A JP12069579 A JP 12069579A JP S5645091 A JPS5645091 A JP S5645091A
- Authority
- JP
- Japan
- Prior art keywords
- medium
- supporting body
- resonator
- length
- resonating plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To eliminate temperature dependency of oscillation wavelength, in a laser device consisting of a laser medium, a resonator and a resonator supporting body, by making an arrangement to compensate for thermal expansion coefficient and length of the supporting body, reflectivity and length due to variation of the medium temperature, and fluctuation of oscillation wavelength due to the variations. CONSTITUTION:A resonator supporting body 4 is composed of SiO2 or invar whose thermal expansion coefficient is small, and a resonating plate 4' is attached to one end of the body. A laser medium 1 having an electrode 3 on its surface is provided on the other end opposite to this, and on the surface opposite to the resonating plate 4' of the medium 1 a reflection preventing surface 6 is provided to prevent reflection caused by difference in reflectivity between the medium 1 and air. And on the surface opposite to the surface 6 of the resonating plate 4', a light-reflecting surface 5 is provided to constitute a resonator between the surfaces 2' and 5. In such a constitution, when temperature coefficient of the supporting body 4 is minus and length of the medium 1 is t, length 1 of the supporting body 4 excluding the resonating plate 4' is prescribed to be approximately 6 times of t.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54120695A JPS6043680B2 (en) | 1979-09-21 | 1979-09-21 | Temperature stabilized laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54120695A JPS6043680B2 (en) | 1979-09-21 | 1979-09-21 | Temperature stabilized laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5645091A true JPS5645091A (en) | 1981-04-24 |
JPS6043680B2 JPS6043680B2 (en) | 1985-09-30 |
Family
ID=14792677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54120695A Expired JPS6043680B2 (en) | 1979-09-21 | 1979-09-21 | Temperature stabilized laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6043680B2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59500248A (en) * | 1982-02-09 | 1984-02-16 | アイ、テイ−、テイ−,インダストリ−ズ インコ−ポレ−テッド | semiconductor laser |
JPS60110187A (en) * | 1983-11-18 | 1985-06-15 | Matsushita Electric Ind Co Ltd | Light feedback type semiconductor laser device |
JPS60109896A (en) * | 1983-11-19 | 1985-06-15 | Ricoh Co Ltd | Thermal recording material |
EP0257898A2 (en) * | 1986-08-09 | 1988-03-02 | Sharp Kabushiki Kaisha | External resonator type semiconductor laser |
EP0267036A2 (en) * | 1986-11-05 | 1988-05-11 | Sharp Kabushiki Kaisha | Waveguide type optical head |
EP0283322A2 (en) * | 1987-03-19 | 1988-09-21 | Sharp Kabushiki Kaisha | An external cavity type semiconductor laser apparatus |
EP0355018A2 (en) * | 1988-08-15 | 1990-02-21 | Honeywell Inc. | Semiconductor laser velocimeter |
FR2664439A1 (en) * | 1990-07-06 | 1992-01-10 | Alsthom Cge Alcatel | Semiconductor laser with external reflector |
JPH05206578A (en) * | 1991-10-11 | 1993-08-13 | American Teleph & Telegr Co <Att> | External cavity diode laser |
EP1149443A1 (en) * | 1998-09-11 | 2001-10-31 | New Focus, Inc. | Tunable laser |
WO2022130146A1 (en) | 2020-12-14 | 2022-06-23 | Litilit, Uab | Method and device for homogenizing the temperature of a laser base plate |
-
1979
- 1979-09-21 JP JP54120695A patent/JPS6043680B2/en not_active Expired
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4583227A (en) * | 1982-02-09 | 1986-04-15 | Itt Industries, Inc. | Temperature compensating semiconductor lasers |
JPS59500248A (en) * | 1982-02-09 | 1984-02-16 | アイ、テイ−、テイ−,インダストリ−ズ インコ−ポレ−テッド | semiconductor laser |
JPH0449793B2 (en) * | 1983-11-18 | 1992-08-12 | Matsushita Electric Ind Co Ltd | |
JPS60110187A (en) * | 1983-11-18 | 1985-06-15 | Matsushita Electric Ind Co Ltd | Light feedback type semiconductor laser device |
JPS60109896A (en) * | 1983-11-19 | 1985-06-15 | Ricoh Co Ltd | Thermal recording material |
JPH05228B2 (en) * | 1983-11-19 | 1993-01-05 | Ricoh Kk | |
EP0257898A2 (en) * | 1986-08-09 | 1988-03-02 | Sharp Kabushiki Kaisha | External resonator type semiconductor laser |
EP0267036B1 (en) * | 1986-11-05 | 1994-02-23 | Sharp Kabushiki Kaisha | Waveguide type optical head |
EP0267036A2 (en) * | 1986-11-05 | 1988-05-11 | Sharp Kabushiki Kaisha | Waveguide type optical head |
EP0283322A2 (en) * | 1987-03-19 | 1988-09-21 | Sharp Kabushiki Kaisha | An external cavity type semiconductor laser apparatus |
EP0355018A2 (en) * | 1988-08-15 | 1990-02-21 | Honeywell Inc. | Semiconductor laser velocimeter |
FR2664439A1 (en) * | 1990-07-06 | 1992-01-10 | Alsthom Cge Alcatel | Semiconductor laser with external reflector |
JPH05206578A (en) * | 1991-10-11 | 1993-08-13 | American Teleph & Telegr Co <Att> | External cavity diode laser |
EP1149443A1 (en) * | 1998-09-11 | 2001-10-31 | New Focus, Inc. | Tunable laser |
EP1149443A4 (en) * | 1998-09-11 | 2006-03-22 | New Focus Inc | Tunable laser |
WO2022130146A1 (en) | 2020-12-14 | 2022-06-23 | Litilit, Uab | Method and device for homogenizing the temperature of a laser base plate |
Also Published As
Publication number | Publication date |
---|---|
JPS6043680B2 (en) | 1985-09-30 |
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