JPS5645091A - Temperature stabilizing laser device - Google Patents

Temperature stabilizing laser device

Info

Publication number
JPS5645091A
JPS5645091A JP12069579A JP12069579A JPS5645091A JP S5645091 A JPS5645091 A JP S5645091A JP 12069579 A JP12069579 A JP 12069579A JP 12069579 A JP12069579 A JP 12069579A JP S5645091 A JPS5645091 A JP S5645091A
Authority
JP
Japan
Prior art keywords
medium
supporting body
resonator
length
resonating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12069579A
Other languages
Japanese (ja)
Other versions
JPS6043680B2 (en
Inventor
Haruhiko Tsuchiya
Yoshihisa Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54120695A priority Critical patent/JPS6043680B2/en
Publication of JPS5645091A publication Critical patent/JPS5645091A/en
Publication of JPS6043680B2 publication Critical patent/JPS6043680B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate temperature dependency of oscillation wavelength, in a laser device consisting of a laser medium, a resonator and a resonator supporting body, by making an arrangement to compensate for thermal expansion coefficient and length of the supporting body, reflectivity and length due to variation of the medium temperature, and fluctuation of oscillation wavelength due to the variations. CONSTITUTION:A resonator supporting body 4 is composed of SiO2 or invar whose thermal expansion coefficient is small, and a resonating plate 4' is attached to one end of the body. A laser medium 1 having an electrode 3 on its surface is provided on the other end opposite to this, and on the surface opposite to the resonating plate 4' of the medium 1 a reflection preventing surface 6 is provided to prevent reflection caused by difference in reflectivity between the medium 1 and air. And on the surface opposite to the surface 6 of the resonating plate 4', a light-reflecting surface 5 is provided to constitute a resonator between the surfaces 2' and 5. In such a constitution, when temperature coefficient of the supporting body 4 is minus and length of the medium 1 is t, length 1 of the supporting body 4 excluding the resonating plate 4' is prescribed to be approximately 6 times of t.
JP54120695A 1979-09-21 1979-09-21 Temperature stabilized laser device Expired JPS6043680B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54120695A JPS6043680B2 (en) 1979-09-21 1979-09-21 Temperature stabilized laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54120695A JPS6043680B2 (en) 1979-09-21 1979-09-21 Temperature stabilized laser device

Publications (2)

Publication Number Publication Date
JPS5645091A true JPS5645091A (en) 1981-04-24
JPS6043680B2 JPS6043680B2 (en) 1985-09-30

Family

ID=14792677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54120695A Expired JPS6043680B2 (en) 1979-09-21 1979-09-21 Temperature stabilized laser device

Country Status (1)

Country Link
JP (1) JPS6043680B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−,インダストリ−ズ インコ−ポレ−テッド semiconductor laser
JPS60110187A (en) * 1983-11-18 1985-06-15 Matsushita Electric Ind Co Ltd Light feedback type semiconductor laser device
JPS60109896A (en) * 1983-11-19 1985-06-15 Ricoh Co Ltd Thermal recording material
EP0257898A2 (en) * 1986-08-09 1988-03-02 Sharp Kabushiki Kaisha External resonator type semiconductor laser
EP0267036A2 (en) * 1986-11-05 1988-05-11 Sharp Kabushiki Kaisha Waveguide type optical head
EP0283322A2 (en) * 1987-03-19 1988-09-21 Sharp Kabushiki Kaisha An external cavity type semiconductor laser apparatus
EP0355018A2 (en) * 1988-08-15 1990-02-21 Honeywell Inc. Semiconductor laser velocimeter
FR2664439A1 (en) * 1990-07-06 1992-01-10 Alsthom Cge Alcatel Semiconductor laser with external reflector
JPH05206578A (en) * 1991-10-11 1993-08-13 American Teleph & Telegr Co <Att> External cavity diode laser
EP1149443A1 (en) * 1998-09-11 2001-10-31 New Focus, Inc. Tunable laser
WO2022130146A1 (en) 2020-12-14 2022-06-23 Litilit, Uab Method and device for homogenizing the temperature of a laser base plate

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583227A (en) * 1982-02-09 1986-04-15 Itt Industries, Inc. Temperature compensating semiconductor lasers
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−,インダストリ−ズ インコ−ポレ−テッド semiconductor laser
JPH0449793B2 (en) * 1983-11-18 1992-08-12 Matsushita Electric Ind Co Ltd
JPS60110187A (en) * 1983-11-18 1985-06-15 Matsushita Electric Ind Co Ltd Light feedback type semiconductor laser device
JPS60109896A (en) * 1983-11-19 1985-06-15 Ricoh Co Ltd Thermal recording material
JPH05228B2 (en) * 1983-11-19 1993-01-05 Ricoh Kk
EP0257898A2 (en) * 1986-08-09 1988-03-02 Sharp Kabushiki Kaisha External resonator type semiconductor laser
EP0267036B1 (en) * 1986-11-05 1994-02-23 Sharp Kabushiki Kaisha Waveguide type optical head
EP0267036A2 (en) * 1986-11-05 1988-05-11 Sharp Kabushiki Kaisha Waveguide type optical head
EP0283322A2 (en) * 1987-03-19 1988-09-21 Sharp Kabushiki Kaisha An external cavity type semiconductor laser apparatus
EP0355018A2 (en) * 1988-08-15 1990-02-21 Honeywell Inc. Semiconductor laser velocimeter
FR2664439A1 (en) * 1990-07-06 1992-01-10 Alsthom Cge Alcatel Semiconductor laser with external reflector
JPH05206578A (en) * 1991-10-11 1993-08-13 American Teleph & Telegr Co <Att> External cavity diode laser
EP1149443A1 (en) * 1998-09-11 2001-10-31 New Focus, Inc. Tunable laser
EP1149443A4 (en) * 1998-09-11 2006-03-22 New Focus Inc Tunable laser
WO2022130146A1 (en) 2020-12-14 2022-06-23 Litilit, Uab Method and device for homogenizing the temperature of a laser base plate

Also Published As

Publication number Publication date
JPS6043680B2 (en) 1985-09-30

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