JPS5644517B2 - - Google Patents
Info
- Publication number
- JPS5644517B2 JPS5644517B2 JP11487273A JP11487273A JPS5644517B2 JP S5644517 B2 JPS5644517 B2 JP S5644517B2 JP 11487273 A JP11487273 A JP 11487273A JP 11487273 A JP11487273 A JP 11487273A JP S5644517 B2 JPS5644517 B2 JP S5644517B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29796272A | 1972-10-16 | 1972-10-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4974849A JPS4974849A (https=) | 1974-07-19 |
| JPS5644517B2 true JPS5644517B2 (https=) | 1981-10-20 |
Family
ID=23148434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11487273A Expired JPS5644517B2 (https=) | 1972-10-16 | 1973-10-15 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3774177A (https=) |
| JP (1) | JPS5644517B2 (https=) |
| CA (1) | CA1003963A (https=) |
| DE (1) | DE2351554C2 (https=) |
| FR (1) | FR2203139B1 (https=) |
| GB (1) | GB1401101A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6044420U (ja) * | 1983-08-31 | 1985-03-28 | 三菱重工業株式会社 | 電線布設装置 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2352607B2 (de) * | 1972-10-20 | 1976-10-28 | Hitachi, Ltd., Tokio | Halbleiterspeicher |
| US3876991A (en) * | 1973-07-11 | 1975-04-08 | Bell Telephone Labor Inc | Dual threshold, three transistor dynamic memory cell |
| US3922650A (en) * | 1974-11-11 | 1975-11-25 | Ncr Co | Switched capacitor non-volatile mnos random access memory cell |
| US4675841A (en) * | 1974-12-23 | 1987-06-23 | Pitney Bowes Inc. | Micro computerized electronic postage meter system |
| US3916390A (en) * | 1974-12-31 | 1975-10-28 | Ibm | Dynamic memory with non-volatile back-up mode |
| JPS6057158B2 (ja) * | 1976-08-16 | 1985-12-13 | エヌ・シ−・ア−ル・コ−ポレ−シヨン | 不揮発性ランダム・アクセス・メモリ−・セル |
| US4104734A (en) * | 1977-06-30 | 1978-08-01 | Fairchild Camera And Instrument Corporation | Low voltage data retention bias circuitry for volatile memories |
| US4375086A (en) * | 1980-05-15 | 1983-02-22 | Ncr Corporation | Volatile/non-volatile dynamic RAM system |
| GB2310939B (en) * | 1993-03-19 | 1997-10-29 | Sven E Wahlstrom | Operating a dynamic memory |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508211A (en) * | 1967-06-23 | 1970-04-21 | Sperry Rand Corp | Electrically alterable non-destructive readout field effect transistor memory |
| US3660827A (en) * | 1969-09-10 | 1972-05-02 | Litton Systems Inc | Bistable electrical circuit with non-volatile storage capability |
| US3718915A (en) * | 1971-06-07 | 1973-02-27 | Motorola Inc | Opposite conductivity gating circuit for refreshing information in semiconductor memory cells |
| BE788583A (fr) * | 1971-09-16 | 1973-01-02 | Intel Corp | Cellule a trois lignes pour memoire a circuit integre a acces aleatoir |
| US3781570A (en) * | 1971-11-22 | 1973-12-25 | Rca Corp | Storage circuit using multiple condition storage elements |
-
1972
- 1972-10-16 US US00297962A patent/US3774177A/en not_active Expired - Lifetime
-
1973
- 1973-09-10 CA CA180,619A patent/CA1003963A/en not_active Expired
- 1973-10-10 GB GB4723073A patent/GB1401101A/en not_active Expired
- 1973-10-13 DE DE2351554A patent/DE2351554C2/de not_active Expired
- 1973-10-15 FR FR7336651A patent/FR2203139B1/fr not_active Expired
- 1973-10-15 JP JP11487273A patent/JPS5644517B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6044420U (ja) * | 1983-08-31 | 1985-03-28 | 三菱重工業株式会社 | 電線布設装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1401101A (en) | 1975-07-16 |
| CA1003963A (en) | 1977-01-18 |
| DE2351554A1 (de) | 1974-04-18 |
| US3774177A (en) | 1973-11-20 |
| DE2351554C2 (de) | 1983-12-15 |
| FR2203139B1 (https=) | 1978-03-10 |
| FR2203139A1 (https=) | 1974-05-10 |
| JPS4974849A (https=) | 1974-07-19 |