JPS5641900A - Manufacture of alpha mercuric iodide single crystal - Google Patents

Manufacture of alpha mercuric iodide single crystal

Info

Publication number
JPS5641900A
JPS5641900A JP8638380A JP8638380A JPS5641900A JP S5641900 A JPS5641900 A JP S5641900A JP 8638380 A JP8638380 A JP 8638380A JP 8638380 A JP8638380 A JP 8638380A JP S5641900 A JPS5641900 A JP S5641900A
Authority
JP
Japan
Prior art keywords
manufacture
single crystal
mercuric iodide
iodide single
alpha mercuric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8638380A
Other languages
English (en)
Japanese (ja)
Inventor
Furorin Nikorau Ion
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPS5641900A publication Critical patent/JPS5641900A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measurement Of Radiation (AREA)
JP8638380A 1979-06-26 1980-06-25 Manufacture of alpha mercuric iodide single crystal Pending JPS5641900A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7916418A FR2459843A1 (fr) 1979-06-26 1979-06-26 Procede de fabrication de monocristaux d'iodure mercurique alpha et monocristaux obtenus

Publications (1)

Publication Number Publication Date
JPS5641900A true JPS5641900A (en) 1981-04-18

Family

ID=9227112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8638380A Pending JPS5641900A (en) 1979-06-26 1980-06-25 Manufacture of alpha mercuric iodide single crystal

Country Status (5)

Country Link
US (1) US4347230A (enExample)
EP (1) EP0022013B1 (enExample)
JP (1) JPS5641900A (enExample)
DE (1) DE3066265D1 (enExample)
FR (1) FR2459843A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60243455A (ja) * 1984-05-14 1985-12-03 キヤリア・コーポレイシヨン 冷凍システム運転方法および冷凍システム制御システム
JPS60245963A (ja) * 1984-05-14 1985-12-05 キヤリア・コーポレイシヨン 冷凍システム運転方法および冷凍システム制御システム
JPS60245962A (ja) * 1984-05-14 1985-12-05 キヤリア・コーポレイシヨン 冷凍システム運転方法および冷凍システム制御システム
JPS62120715A (ja) * 1985-11-20 1987-06-02 Tokyo Electric Co Ltd リセツト信号発生回路

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2541668B1 (fr) * 1983-02-28 1985-06-07 Commissariat Energie Atomique Procede de preparation d'iodure mercurique alpha de haute purete destine a etre utilise comme source de matiere premiere pour la croissance de monocristaux pour la detection nucleaire
US5004723A (en) * 1989-01-31 1991-04-02 Industrial Technology Research Institute Preparation of superconducting epitaxial film using the method of liquid-phase epitaxial growth
US5853691A (en) * 1993-08-10 1998-12-29 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On The Behalf Of The University Of Oregon Silver halides of altered crystal habit or morphology and methods for producing same
US5545394A (en) * 1993-08-10 1996-08-13 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Complexation-mediated crystal-forming reactions using complexing agents
US5853686A (en) * 1993-08-10 1998-12-29 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of The University Of Oregon Calcium carbonates of altered crystal habit or morphology and methods for producing same
WO2003018716A1 (en) 2001-08-29 2003-03-06 Generation Technology Research Pty Ltd Coal dewatering system and method
CN102351430B (zh) * 2011-07-11 2013-06-05 上海大学 用于辐射探测器的多晶碘化汞薄膜的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969182A (en) * 1975-07-16 1976-07-13 The United States Of America As Represented By The United States Energy Research And Development Administration Growth of mercuric iodide single crystals from dimethylsulfoxide
FR2338742A1 (fr) * 1976-01-26 1977-08-19 Commissariat Energie Atomique Procede de fabrication de monocristaux d'iodure mercurique alpha

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60243455A (ja) * 1984-05-14 1985-12-03 キヤリア・コーポレイシヨン 冷凍システム運転方法および冷凍システム制御システム
JPS60245963A (ja) * 1984-05-14 1985-12-05 キヤリア・コーポレイシヨン 冷凍システム運転方法および冷凍システム制御システム
JPS60245962A (ja) * 1984-05-14 1985-12-05 キヤリア・コーポレイシヨン 冷凍システム運転方法および冷凍システム制御システム
JPS62120715A (ja) * 1985-11-20 1987-06-02 Tokyo Electric Co Ltd リセツト信号発生回路

Also Published As

Publication number Publication date
FR2459843B1 (enExample) 1985-02-22
US4347230A (en) 1982-08-31
FR2459843A1 (fr) 1981-01-16
EP0022013A3 (en) 1981-04-01
DE3066265D1 (en) 1984-03-01
EP0022013A2 (fr) 1981-01-07
EP0022013B1 (fr) 1984-01-25

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