JPS5636564B2 - - Google Patents
Info
- Publication number
- JPS5636564B2 JPS5636564B2 JP8584676A JP8584676A JPS5636564B2 JP S5636564 B2 JPS5636564 B2 JP S5636564B2 JP 8584676 A JP8584676 A JP 8584676A JP 8584676 A JP8584676 A JP 8584676A JP S5636564 B2 JPS5636564 B2 JP S5636564B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8584676A JPS5311576A (en) | 1976-07-19 | 1976-07-19 | Method of forming thin film by vapourrgrowth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8584676A JPS5311576A (en) | 1976-07-19 | 1976-07-19 | Method of forming thin film by vapourrgrowth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5311576A JPS5311576A (en) | 1978-02-02 |
| JPS5636564B2 true JPS5636564B2 (ja) | 1981-08-25 |
Family
ID=13870224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8584676A Granted JPS5311576A (en) | 1976-07-19 | 1976-07-19 | Method of forming thin film by vapourrgrowth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5311576A (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190297A (ja) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | 有機金属気相結晶成長方法 |
| JPS59190296A (ja) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | 有機金属気相結晶成長方法 |
| US4649859A (en) * | 1985-02-19 | 1987-03-17 | The United States Of America As Represented By The United States Department Of Energy | Reactor design for uniform chemical vapor deposition-grown films without substrate rotation |
| FR2599558B1 (fr) * | 1986-05-27 | 1988-09-02 | Labo Electronique Physique | Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat |
| US5167718A (en) * | 1988-06-23 | 1992-12-01 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| US4945856A (en) * | 1988-06-23 | 1990-08-07 | Jeffrey Stewart | Parylene deposition chamber |
| US6406544B1 (en) | 1988-06-23 | 2002-06-18 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| US5078091A (en) * | 1988-06-23 | 1992-01-07 | Jeffrey Stewart | Parylene deposition chamber and method of use |
| JP2503688Y2 (ja) * | 1991-05-15 | 1996-07-03 | 日本酸素株式会社 | 薄膜製造装置 |
| US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
| US5488833A (en) * | 1994-09-26 | 1996-02-06 | Stewart; Jeffrey | Tangential flow cold trap |
| US5882725A (en) * | 1997-07-01 | 1999-03-16 | Para Tech Coating, Inc. | Parylene deposition chamber including eccentric part tumbler |
| US6737224B2 (en) | 2001-04-17 | 2004-05-18 | Jeffrey Stewart | Method of preparing thin supported films by vacuum deposition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4325497Y1 (ja) * | 1966-03-02 | 1968-10-25 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329101Y2 (ja) * | 1973-01-19 | 1978-07-21 |
-
1976
- 1976-07-19 JP JP8584676A patent/JPS5311576A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4325497Y1 (ja) * | 1966-03-02 | 1968-10-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5311576A (en) | 1978-02-02 |