JPS5635024B2 - - Google Patents

Info

Publication number
JPS5635024B2
JPS5635024B2 JP13862573A JP13862573A JPS5635024B2 JP S5635024 B2 JPS5635024 B2 JP S5635024B2 JP 13862573 A JP13862573 A JP 13862573A JP 13862573 A JP13862573 A JP 13862573A JP S5635024 B2 JPS5635024 B2 JP S5635024B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13862573A
Other languages
Japanese (ja)
Other versions
JPS5092689A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13862573A priority Critical patent/JPS5635024B2/ja
Priority to DE2458680A priority patent/DE2458680C3/de
Priority to CA215,937A priority patent/CA1015464A/en
Publication of JPS5092689A publication Critical patent/JPS5092689A/ja
Publication of JPS5635024B2 publication Critical patent/JPS5635024B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Element Separation (AREA)
JP13862573A 1973-12-14 1973-12-14 Expired JPS5635024B2 (en:Method)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP13862573A JPS5635024B2 (en:Method) 1973-12-14 1973-12-14
DE2458680A DE2458680C3 (de) 1973-12-14 1974-12-11 Verfahren zur Herstellung von dielektrisch isolierten Substraten geringer Durchbiegung für monolithisch integrierte Halbleiterschaltungen
CA215,937A CA1015464A (en) 1973-12-14 1974-12-13 Process for producing dielectric-isolated substrate for monolithic semiconductor integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13862573A JPS5635024B2 (en:Method) 1973-12-14 1973-12-14

Publications (2)

Publication Number Publication Date
JPS5092689A JPS5092689A (en:Method) 1975-07-24
JPS5635024B2 true JPS5635024B2 (en:Method) 1981-08-14

Family

ID=15226426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13862573A Expired JPS5635024B2 (en:Method) 1973-12-14 1973-12-14

Country Status (3)

Country Link
JP (1) JPS5635024B2 (en:Method)
CA (1) CA1015464A (en:Method)
DE (1) DE2458680C3 (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718341B2 (en:Method) * 1974-12-11 1982-04-16
JPS5353320A (en) * 1976-10-25 1978-05-15 Kobe Kikou Kk Device for supplying slide for slide projector
JPS62124754A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Works Ltd 絶縁層分離基板の製法
JPS62124753A (ja) * 1985-11-25 1987-06-06 Matsushita Electric Works Ltd 絶縁層分離基板の製法
JPS63182836A (ja) * 1987-01-24 1988-07-28 Matsushita Electric Works Ltd 絶縁層分離基板の製法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1521400B1 (de) * 1962-06-04 1970-07-16 Philips Nv Verfahren zum Herstellen eines Halbleiterbauelementes
DE1290925B (de) * 1963-06-10 1969-03-20 Philips Nv Verfahren zum Abscheiden von Silicium auf einem Halbleiterkoerper
DE1243274C2 (de) * 1964-05-08 1973-01-11 Licentia Gmbh Verfahren zur Herstellung von Halbleiteranordnungen mit einem Halbleiterkoerper aus Silizium
DE1261480B (de) * 1964-09-17 1968-02-22 Telefunken Patent Verfahren zur Erzeugung einer elektrisch isolierenden Schicht auf einem Halbleiterkoerper
US3461003A (en) * 1964-12-14 1969-08-12 Motorola Inc Method of fabricating a semiconductor structure with an electrically isolated region of semiconductor material
CH428947A (fr) * 1966-01-31 1967-01-31 Centre Electron Horloger Procédé de fabrication d'un circuit intégré
US3624463A (en) * 1969-10-17 1971-11-30 Motorola Inc Method of and apparatus for indicating semiconductor island thickness and for increasing isolation and decreasing capacity between islands
DE2047998A1 (de) * 1970-09-30 1972-04-06 Licentia Gmbh Verfahren zum Herstellen einer Planaranordnung

Also Published As

Publication number Publication date
JPS5092689A (en:Method) 1975-07-24
DE2458680C3 (de) 1984-07-26
CA1015464A (en) 1977-08-09
DE2458680A1 (de) 1975-06-26
DE2458680B2 (de) 1979-02-01

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