JPS5635024B2 - - Google Patents
Info
- Publication number
- JPS5635024B2 JPS5635024B2 JP13862573A JP13862573A JPS5635024B2 JP S5635024 B2 JPS5635024 B2 JP S5635024B2 JP 13862573 A JP13862573 A JP 13862573A JP 13862573 A JP13862573 A JP 13862573A JP S5635024 B2 JPS5635024 B2 JP S5635024B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10W10/019—
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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- H10P14/6309—
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- H10P14/6322—
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- H10P14/6334—
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- H10P14/6682—
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- H10P14/69215—
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- H10P95/00—
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- H10W10/10—
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Element Separation (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13862573A JPS5635024B2 (cg-RX-API-DMAC10.html) | 1973-12-14 | 1973-12-14 | |
| DE2458680A DE2458680C3 (de) | 1973-12-14 | 1974-12-11 | Verfahren zur Herstellung von dielektrisch isolierten Substraten geringer Durchbiegung für monolithisch integrierte Halbleiterschaltungen |
| CA215,937A CA1015464A (en) | 1973-12-14 | 1974-12-13 | Process for producing dielectric-isolated substrate for monolithic semiconductor integrated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13862573A JPS5635024B2 (cg-RX-API-DMAC10.html) | 1973-12-14 | 1973-12-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5092689A JPS5092689A (cg-RX-API-DMAC10.html) | 1975-07-24 |
| JPS5635024B2 true JPS5635024B2 (cg-RX-API-DMAC10.html) | 1981-08-14 |
Family
ID=15226426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13862573A Expired JPS5635024B2 (cg-RX-API-DMAC10.html) | 1973-12-14 | 1973-12-14 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5635024B2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1015464A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2458680C3 (cg-RX-API-DMAC10.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5718341B2 (cg-RX-API-DMAC10.html) * | 1974-12-11 | 1982-04-16 | ||
| JPS5353320A (en) * | 1976-10-25 | 1978-05-15 | Kobe Kikou Kk | Device for supplying slide for slide projector |
| JPS62124753A (ja) * | 1985-11-25 | 1987-06-06 | Matsushita Electric Works Ltd | 絶縁層分離基板の製法 |
| JPS62124754A (ja) * | 1985-11-25 | 1987-06-06 | Matsushita Electric Works Ltd | 絶縁層分離基板の製法 |
| JPS63182836A (ja) * | 1987-01-24 | 1988-07-28 | Matsushita Electric Works Ltd | 絶縁層分離基板の製法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT246789B (de) * | 1962-06-04 | 1966-05-10 | Philips Nv | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung |
| DE1290925B (de) * | 1963-06-10 | 1969-03-20 | Philips Nv | Verfahren zum Abscheiden von Silicium auf einem Halbleiterkoerper |
| DE1243274C2 (de) * | 1964-05-08 | 1973-01-11 | Licentia Gmbh | Verfahren zur Herstellung von Halbleiteranordnungen mit einem Halbleiterkoerper aus Silizium |
| DE1261480B (de) * | 1964-09-17 | 1968-02-22 | Telefunken Patent | Verfahren zur Erzeugung einer elektrisch isolierenden Schicht auf einem Halbleiterkoerper |
| US3461003A (en) * | 1964-12-14 | 1969-08-12 | Motorola Inc | Method of fabricating a semiconductor structure with an electrically isolated region of semiconductor material |
| CH428947A (fr) * | 1966-01-31 | 1967-01-31 | Centre Electron Horloger | Procédé de fabrication d'un circuit intégré |
| US3624463A (en) * | 1969-10-17 | 1971-11-30 | Motorola Inc | Method of and apparatus for indicating semiconductor island thickness and for increasing isolation and decreasing capacity between islands |
| DE2047998A1 (de) * | 1970-09-30 | 1972-04-06 | Licentia Gmbh | Verfahren zum Herstellen einer Planaranordnung |
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1973
- 1973-12-14 JP JP13862573A patent/JPS5635024B2/ja not_active Expired
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1974
- 1974-12-11 DE DE2458680A patent/DE2458680C3/de not_active Expired
- 1974-12-13 CA CA215,937A patent/CA1015464A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5092689A (cg-RX-API-DMAC10.html) | 1975-07-24 |
| DE2458680C3 (de) | 1984-07-26 |
| DE2458680B2 (de) | 1979-02-01 |
| CA1015464A (en) | 1977-08-09 |
| DE2458680A1 (de) | 1975-06-26 |