JPS5633859B2 - - Google Patents

Info

Publication number
JPS5633859B2
JPS5633859B2 JP3580777A JP3580777A JPS5633859B2 JP S5633859 B2 JPS5633859 B2 JP S5633859B2 JP 3580777 A JP3580777 A JP 3580777A JP 3580777 A JP3580777 A JP 3580777A JP S5633859 B2 JPS5633859 B2 JP S5633859B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3580777A
Other versions
JPS53120270A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3580777A priority Critical patent/JPS53120270A/ja
Publication of JPS53120270A publication Critical patent/JPS53120270A/ja
Publication of JPS5633859B2 publication Critical patent/JPS5633859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)
JP3580777A 1977-03-29 1977-03-29 Evaporation method for silicon monoxide (sio) to compound semiconductor Granted JPS53120270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3580777A JPS53120270A (en) 1977-03-29 1977-03-29 Evaporation method for silicon monoxide (sio) to compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3580777A JPS53120270A (en) 1977-03-29 1977-03-29 Evaporation method for silicon monoxide (sio) to compound semiconductor

Publications (2)

Publication Number Publication Date
JPS53120270A JPS53120270A (en) 1978-10-20
JPS5633859B2 true JPS5633859B2 (ja) 1981-08-06

Family

ID=12452190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3580777A Granted JPS53120270A (en) 1977-03-29 1977-03-29 Evaporation method for silicon monoxide (sio) to compound semiconductor

Country Status (1)

Country Link
JP (1) JPS53120270A (ja)

Also Published As

Publication number Publication date
JPS53120270A (en) 1978-10-20

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