JPS5631769B2 - - Google Patents
Info
- Publication number
- JPS5631769B2 JPS5631769B2 JP7931877A JP7931877A JPS5631769B2 JP S5631769 B2 JPS5631769 B2 JP S5631769B2 JP 7931877 A JP7931877 A JP 7931877A JP 7931877 A JP7931877 A JP 7931877A JP S5631769 B2 JPS5631769 B2 JP S5631769B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
- H03K19/09482—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7931877A JPS5413759A (en) | 1977-07-01 | 1977-07-01 | Logic circuit using complementary mis transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7931877A JPS5413759A (en) | 1977-07-01 | 1977-07-01 | Logic circuit using complementary mis transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5413759A JPS5413759A (en) | 1979-02-01 |
JPS5631769B2 true JPS5631769B2 (en) | 1981-07-23 |
Family
ID=13686511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7931877A Granted JPS5413759A (en) | 1977-07-01 | 1977-07-01 | Logic circuit using complementary mis transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5413759A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54109788A (en) * | 1978-02-16 | 1979-08-28 | Nec Corp | Semiconductor integrated circuit device |
JPS612417A (en) * | 1984-06-15 | 1986-01-08 | Nippon Telegr & Teleph Corp <Ntt> | Connection type flip-flop circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS531454A (en) * | 1976-06-28 | 1978-01-09 | Hitachi Ltd | Semiconductor device |
-
1977
- 1977-07-01 JP JP7931877A patent/JPS5413759A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS531454A (en) * | 1976-06-28 | 1978-01-09 | Hitachi Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5413759A (en) | 1979-02-01 |