JPS5631320B2 - - Google Patents
Info
- Publication number
- JPS5631320B2 JPS5631320B2 JP4315274A JP4315274A JPS5631320B2 JP S5631320 B2 JPS5631320 B2 JP S5631320B2 JP 4315274 A JP4315274 A JP 4315274A JP 4315274 A JP4315274 A JP 4315274A JP S5631320 B2 JPS5631320 B2 JP S5631320B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4315274A JPS5631320B2 (fr) | 1974-04-16 | 1974-04-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4315274A JPS5631320B2 (fr) | 1974-04-16 | 1974-04-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50134999A JPS50134999A (fr) | 1975-10-25 |
JPS5631320B2 true JPS5631320B2 (fr) | 1981-07-20 |
Family
ID=12655858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4315274A Expired JPS5631320B2 (fr) | 1974-04-16 | 1974-04-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5631320B2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021619A (ja) * | 1991-03-18 | 2009-01-29 | Trustees Of Boston Univ | サファイア基板を活性窒素に暴露して半導体デバイスを作製する方法及び半導体デバイス |
-
1974
- 1974-04-16 JP JP4315274A patent/JPS5631320B2/ja not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021619A (ja) * | 1991-03-18 | 2009-01-29 | Trustees Of Boston Univ | サファイア基板を活性窒素に暴露して半導体デバイスを作製する方法及び半導体デバイス |
JP2010093271A (ja) * | 1991-03-18 | 2010-04-22 | Trustees Of Boston Univ | サファイア基板を活性窒素に暴露して半導体デバイスを作製する方法及び半導体デバイス |
JP2012248856A (ja) * | 1991-03-18 | 2012-12-13 | Trustees Of Boston Univ | サファイア基板を活性窒素に暴露して半導体デバイスを作製する方法及び半導体デバイス |
Also Published As
Publication number | Publication date |
---|---|
JPS50134999A (fr) | 1975-10-25 |