JPS5630704B2 - - Google Patents

Info

Publication number
JPS5630704B2
JPS5630704B2 JP5840273A JP5840273A JPS5630704B2 JP S5630704 B2 JPS5630704 B2 JP S5630704B2 JP 5840273 A JP5840273 A JP 5840273A JP 5840273 A JP5840273 A JP 5840273A JP S5630704 B2 JPS5630704 B2 JP S5630704B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5840273A
Other languages
Japanese (ja)
Other versions
JPS5010575A (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5840273A priority Critical patent/JPS5630704B2/ja
Publication of JPS5010575A publication Critical patent/JPS5010575A/ja
Publication of JPS5630704B2 publication Critical patent/JPS5630704B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP5840273A 1973-05-24 1973-05-24 Expired JPS5630704B2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5840273A JPS5630704B2 (fr) 1973-05-24 1973-05-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5840273A JPS5630704B2 (fr) 1973-05-24 1973-05-24

Publications (2)

Publication Number Publication Date
JPS5010575A JPS5010575A (fr) 1975-02-03
JPS5630704B2 true JPS5630704B2 (fr) 1981-07-16

Family

ID=13083352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5840273A Expired JPS5630704B2 (fr) 1973-05-24 1973-05-24

Country Status (1)

Country Link
JP (1) JPS5630704B2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5246877A (en) * 1989-01-31 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a polycrystalline electrode region

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069068A (en) * 1976-07-02 1978-01-17 International Business Machines Corporation Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
US5096840A (en) * 1990-08-15 1992-03-17 At&T Bell Laboratories Method of making a polysilicon emitter bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5246877A (en) * 1989-01-31 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a polycrystalline electrode region

Also Published As

Publication number Publication date
JPS5010575A (fr) 1975-02-03

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