JPS5630704B2 - - Google Patents
Info
- Publication number
- JPS5630704B2 JPS5630704B2 JP5840273A JP5840273A JPS5630704B2 JP S5630704 B2 JPS5630704 B2 JP S5630704B2 JP 5840273 A JP5840273 A JP 5840273A JP 5840273 A JP5840273 A JP 5840273A JP S5630704 B2 JPS5630704 B2 JP S5630704B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5840273A JPS5630704B2 (enExample) | 1973-05-24 | 1973-05-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5840273A JPS5630704B2 (enExample) | 1973-05-24 | 1973-05-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5010575A JPS5010575A (enExample) | 1975-02-03 |
| JPS5630704B2 true JPS5630704B2 (enExample) | 1981-07-16 |
Family
ID=13083352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5840273A Expired JPS5630704B2 (enExample) | 1973-05-24 | 1973-05-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5630704B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246877A (en) * | 1989-01-31 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a polycrystalline electrode region |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4069068A (en) * | 1976-07-02 | 1978-01-17 | International Business Machines Corporation | Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions |
| US5096840A (en) * | 1990-08-15 | 1992-03-17 | At&T Bell Laboratories | Method of making a polysilicon emitter bipolar transistor |
-
1973
- 1973-05-24 JP JP5840273A patent/JPS5630704B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246877A (en) * | 1989-01-31 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a polycrystalline electrode region |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5010575A (enExample) | 1975-02-03 |