JPS5630058B2 - - Google Patents

Info

Publication number
JPS5630058B2
JPS5630058B2 JP8609477A JP8609477A JPS5630058B2 JP S5630058 B2 JPS5630058 B2 JP S5630058B2 JP 8609477 A JP8609477 A JP 8609477A JP 8609477 A JP8609477 A JP 8609477A JP S5630058 B2 JPS5630058 B2 JP S5630058B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8609477A
Other languages
Japanese (ja)
Other versions
JPS5421973A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8609477A priority Critical patent/JPS5421973A/en
Publication of JPS5421973A publication Critical patent/JPS5421973A/en
Publication of JPS5630058B2 publication Critical patent/JPS5630058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
JP8609477A 1977-07-20 1977-07-20 Gas phase reaction apparatus Granted JPS5421973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8609477A JPS5421973A (en) 1977-07-20 1977-07-20 Gas phase reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8609477A JPS5421973A (en) 1977-07-20 1977-07-20 Gas phase reaction apparatus

Publications (2)

Publication Number Publication Date
JPS5421973A JPS5421973A (en) 1979-02-19
JPS5630058B2 true JPS5630058B2 (en) 1981-07-13

Family

ID=13877111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8609477A Granted JPS5421973A (en) 1977-07-20 1977-07-20 Gas phase reaction apparatus

Country Status (1)

Country Link
JP (1) JPS5421973A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235488Y2 (en) * 1981-09-18 1987-09-09
JPH02139540U (en) * 1989-04-25 1990-11-21
JPH0659294B2 (en) * 1986-11-20 1994-08-10 株式会社モリタ東京製作所 Dental treatment chair

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214127Y2 (en) * 1980-11-12 1987-04-10
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
JPS58163431A (en) * 1982-03-24 1983-09-28 Fujitsu Ltd Chemical vapor deposition method and apparatus
JPS5931239U (en) * 1982-08-23 1984-02-27 日本電気ホームエレクトロニクス株式会社 semiconductor manufacturing equipment
JPS5969494A (en) * 1982-10-14 1984-04-19 Ulvac Corp Reaction and treatment apparatus for low pressure gas or vapor
JPS6034010A (en) * 1983-08-05 1985-02-21 Agency Of Ind Science & Technol Reaction tube
JPH0691015B2 (en) * 1984-12-27 1994-11-14 富士通株式会社 Vapor growth apparatus and pretreatment method thereof
WO1999043875A1 (en) * 1998-02-27 1999-09-02 Super Silicon Crystal Research Institute Corp. Epitaxial growth apparatus
JP2007039275A (en) * 2005-08-03 2007-02-15 Furukawa Co Ltd Gas phase growing apparatus, manufacturing method of group iii nitride semiconductor substrate, and group iii nitride semiconductor substrate
JP5736291B2 (en) * 2011-09-28 2015-06-17 株式会社ニューフレアテクノロジー Film forming apparatus and film forming method
US9314824B2 (en) 2013-11-08 2016-04-19 Mks Instruments, Inc. Powder and deposition control in throttle valves

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235488Y2 (en) * 1981-09-18 1987-09-09
JPH0659294B2 (en) * 1986-11-20 1994-08-10 株式会社モリタ東京製作所 Dental treatment chair
JPH02139540U (en) * 1989-04-25 1990-11-21

Also Published As

Publication number Publication date
JPS5421973A (en) 1979-02-19

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