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Filing date
Publication date
Application filedfiledCritical
Priority to JP50032433ApriorityCriticalpatent/JPS51115781A/ja
Publication of JPS51115781ApublicationCriticalpatent/JPS51115781A/ja
Publication of JPS5628028B2publicationCriticalpatent/JPS5628028B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
H10D84/131—Thyristors having built-in components
H10D84/135—Thyristors having built-in components the built-in components being diodes
H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
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Thyristors
(AREA)
JP50032433A1975-03-191975-03-19Inverse conduction type thyristor
GrantedJPS51115781A
(en)