JPS5624384B2 - - Google Patents
Info
- Publication number
- JPS5624384B2 JPS5624384B2 JP1244574A JP1244574A JPS5624384B2 JP S5624384 B2 JPS5624384 B2 JP S5624384B2 JP 1244574 A JP1244574 A JP 1244574A JP 1244574 A JP1244574 A JP 1244574A JP S5624384 B2 JPS5624384 B2 JP S5624384B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1244574A JPS5624384B2 (cs) | 1974-01-30 | 1974-01-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1244574A JPS5624384B2 (cs) | 1974-01-30 | 1974-01-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50107868A JPS50107868A (cs) | 1975-08-25 |
| JPS5624384B2 true JPS5624384B2 (cs) | 1981-06-05 |
Family
ID=11805507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1244574A Expired JPS5624384B2 (cs) | 1974-01-30 | 1974-01-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5624384B2 (cs) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4252582A (en) * | 1980-01-25 | 1981-02-24 | International Business Machines Corporation | Self aligned method for making bipolar transistor having minimum base to emitter contact spacing |
| EP0093786B1 (de) * | 1982-05-06 | 1986-08-06 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer planaren monolithisch integrierten Festkörperschaltung mit mindestens einem Isolierschicht-Feldeffekttransistor und mit mindestens einem Bipolartransistor |
| DE3369030D1 (en) * | 1983-04-18 | 1987-02-12 | Itt Ind Gmbh Deutsche | Method of making a monolithic integrated circuit comprising at least one insulated gate field-effect transistor |
| JPS63169763A (ja) * | 1987-01-07 | 1988-07-13 | Matsushita Electronics Corp | トランジスタの製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5427111A (en) * | 1977-07-29 | 1979-03-01 | Nippon Signal Co Ltd:The | Centralized train controlling method and apparatus therefor |
-
1974
- 1974-01-30 JP JP1244574A patent/JPS5624384B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50107868A (cs) | 1975-08-25 |