JPS5621754B2 - - Google Patents

Info

Publication number
JPS5621754B2
JPS5621754B2 JP15300478A JP15300478A JPS5621754B2 JP S5621754 B2 JPS5621754 B2 JP S5621754B2 JP 15300478 A JP15300478 A JP 15300478A JP 15300478 A JP15300478 A JP 15300478A JP S5621754 B2 JPS5621754 B2 JP S5621754B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15300478A
Other languages
Japanese (ja)
Other versions
JPS5580797A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15300478A priority Critical patent/JPS5580797A/ja
Priority to US06/100,480 priority patent/US4322263A/en
Publication of JPS5580797A publication Critical patent/JPS5580797A/ja
Publication of JPS5621754B2 publication Critical patent/JPS5621754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06Non-vertical pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15300478A 1978-12-09 1978-12-09 Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection Granted JPS5580797A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15300478A JPS5580797A (en) 1978-12-09 1978-12-09 Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection
US06/100,480 US4322263A (en) 1978-12-09 1979-12-05 Method for horizontal ribbon crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15300478A JPS5580797A (en) 1978-12-09 1978-12-09 Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection

Publications (2)

Publication Number Publication Date
JPS5580797A JPS5580797A (en) 1980-06-18
JPS5621754B2 true JPS5621754B2 (en, 2012) 1981-05-21

Family

ID=15552837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15300478A Granted JPS5580797A (en) 1978-12-09 1978-12-09 Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection

Country Status (2)

Country Link
US (1) US4322263A (en, 2012)
JP (1) JPS5580797A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03101441U (en, 2012) * 1990-01-31 1991-10-23

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599132A (en) * 1985-01-18 1986-07-08 Energy Materials Corporation Guidance system for low angle silicon ribbon growth
US5128111A (en) * 1988-03-23 1992-07-07 Manfred R. Kuehnle Appartus for making inorganic webs and structures formed thereof
JP3906484B2 (ja) 2003-03-28 2007-04-18 日本精機株式会社 指針照明装置
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US8064071B2 (en) * 2008-03-14 2011-11-22 Varian Semiconductor Equipment Associates, Inc. Floating sheet measurement apparatus and method
US7816153B2 (en) * 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
US8545624B2 (en) * 2008-06-20 2013-10-01 Varian Semiconductor Equipment Associates, Inc. Method for continuous formation of a purified sheet from a melt
US9567691B2 (en) * 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
US8475591B2 (en) * 2008-08-15 2013-07-02 Varian Semiconductor Equipment Associates, Inc. Method of controlling a thickness of a sheet formed from a melt
US7998224B2 (en) 2008-10-21 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Removal of a sheet from a production apparatus
US8764901B2 (en) * 2010-05-06 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using elasticity and buoyancy
WO2011156648A1 (en) 2010-06-09 2011-12-15 President And Fellows Of Harvard College Method for producing films
CN113089074B (zh) * 2021-03-30 2023-01-20 中国科学院上海光学精密机械研究所 Dkdp晶体长籽晶二维运动生长方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
DE2633961C2 (de) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K. Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03101441U (en, 2012) * 1990-01-31 1991-10-23

Also Published As

Publication number Publication date
US4322263A (en) 1982-03-30
JPS5580797A (en) 1980-06-18

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