JPS5621754B2 - - Google Patents
Info
- Publication number
- JPS5621754B2 JPS5621754B2 JP15300478A JP15300478A JPS5621754B2 JP S5621754 B2 JPS5621754 B2 JP S5621754B2 JP 15300478 A JP15300478 A JP 15300478A JP 15300478 A JP15300478 A JP 15300478A JP S5621754 B2 JPS5621754 B2 JP S5621754B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15300478A JPS5580797A (en) | 1978-12-09 | 1978-12-09 | Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection |
US06/100,480 US4322263A (en) | 1978-12-09 | 1979-12-05 | Method for horizontal ribbon crystal growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15300478A JPS5580797A (en) | 1978-12-09 | 1978-12-09 | Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5580797A JPS5580797A (en) | 1980-06-18 |
JPS5621754B2 true JPS5621754B2 (en, 2012) | 1981-05-21 |
Family
ID=15552837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15300478A Granted JPS5580797A (en) | 1978-12-09 | 1978-12-09 | Ribbon crystal growing method by lateral pulling accompanied by circulating melt convection |
Country Status (2)
Country | Link |
---|---|
US (1) | US4322263A (en, 2012) |
JP (1) | JPS5580797A (en, 2012) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03101441U (en, 2012) * | 1990-01-31 | 1991-10-23 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4599132A (en) * | 1985-01-18 | 1986-07-08 | Energy Materials Corporation | Guidance system for low angle silicon ribbon growth |
US5128111A (en) * | 1988-03-23 | 1992-07-07 | Manfred R. Kuehnle | Appartus for making inorganic webs and structures formed thereof |
JP3906484B2 (ja) | 2003-03-28 | 2007-04-18 | 日本精機株式会社 | 指針照明装置 |
US7855087B2 (en) * | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
US8064071B2 (en) * | 2008-03-14 | 2011-11-22 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet measurement apparatus and method |
US7816153B2 (en) * | 2008-06-05 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for producing a dislocation-free crystalline sheet |
US8545624B2 (en) * | 2008-06-20 | 2013-10-01 | Varian Semiconductor Equipment Associates, Inc. | Method for continuous formation of a purified sheet from a melt |
US9567691B2 (en) * | 2008-06-20 | 2017-02-14 | Varian Semiconductor Equipment Associates, Inc. | Melt purification and delivery system |
US8475591B2 (en) * | 2008-08-15 | 2013-07-02 | Varian Semiconductor Equipment Associates, Inc. | Method of controlling a thickness of a sheet formed from a melt |
US7998224B2 (en) | 2008-10-21 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Removal of a sheet from a production apparatus |
US8764901B2 (en) * | 2010-05-06 | 2014-07-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using elasticity and buoyancy |
WO2011156648A1 (en) | 2010-06-09 | 2011-12-15 | President And Fellows Of Harvard College | Method for producing films |
CN113089074B (zh) * | 2021-03-30 | 2023-01-20 | 中国科学院上海光学精密机械研究所 | Dkdp晶体长籽晶二维运动生长方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3370927A (en) * | 1966-02-28 | 1968-02-27 | Westinghouse Electric Corp | Method of angularly pulling continuous dendritic crystals |
DE2633961C2 (de) * | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
-
1978
- 1978-12-09 JP JP15300478A patent/JPS5580797A/ja active Granted
-
1979
- 1979-12-05 US US06/100,480 patent/US4322263A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03101441U (en, 2012) * | 1990-01-31 | 1991-10-23 |
Also Published As
Publication number | Publication date |
---|---|
US4322263A (en) | 1982-03-30 |
JPS5580797A (en) | 1980-06-18 |