JPS56165372A - Communication photodiode with minimum dark current - Google Patents

Communication photodiode with minimum dark current

Info

Publication number
JPS56165372A
JPS56165372A JP6053381A JP6053381A JPS56165372A JP S56165372 A JPS56165372 A JP S56165372A JP 6053381 A JP6053381 A JP 6053381A JP 6053381 A JP6053381 A JP 6053381A JP S56165372 A JPS56165372 A JP S56165372A
Authority
JP
Japan
Prior art keywords
dark current
minimum dark
communication photodiode
photodiode
communication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6053381A
Other languages
English (en)
Japanese (ja)
Inventor
Perusaru Tooma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS56165372A publication Critical patent/JPS56165372A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes

Landscapes

  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)
JP6053381A 1980-04-23 1981-04-21 Communication photodiode with minimum dark current Pending JPS56165372A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8009114A FR2481520A1 (fr) 1980-04-23 1980-04-23 Photodiode de telecommunications a courant d'obscurite minimal

Publications (1)

Publication Number Publication Date
JPS56165372A true JPS56165372A (en) 1981-12-18

Family

ID=9241260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6053381A Pending JPS56165372A (en) 1980-04-23 1981-04-21 Communication photodiode with minimum dark current

Country Status (3)

Country Link
EP (1) EP0038733A3 (enExample)
JP (1) JPS56165372A (enExample)
FR (1) FR2481520A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9003039D0 (en) * 1990-02-10 1990-04-11 Stc Plc Photodiode

Also Published As

Publication number Publication date
FR2481520A1 (fr) 1981-10-30
EP0038733A2 (fr) 1981-10-28
FR2481520B1 (enExample) 1983-11-04
EP0038733A3 (fr) 1983-07-06

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