JPS56146239A - Inactivating method for surface of semiconductor element - Google Patents

Inactivating method for surface of semiconductor element

Info

Publication number
JPS56146239A
JPS56146239A JP4931280A JP4931280A JPS56146239A JP S56146239 A JPS56146239 A JP S56146239A JP 4931280 A JP4931280 A JP 4931280A JP 4931280 A JP4931280 A JP 4931280A JP S56146239 A JPS56146239 A JP S56146239A
Authority
JP
Japan
Prior art keywords
glass
electrodeposition
amount
semiconductor element
electrodeposition liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4931280A
Other languages
Japanese (ja)
Inventor
Junichi Oura
Torakichi Kobayashi
Masaru Shinpo
Katsujiro Tanzawa
Kazuyoshi Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4931280A priority Critical patent/JPS56146239A/en
Publication of JPS56146239A publication Critical patent/JPS56146239A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To control an amount of an electrodeposition of glass and decrease glass cracks by a method wherein when glass corpuscles are electrodeposited on the semiconductor element surface by an electrophotoresist method, the electrodeposition is stopped when an electric potential of an electrodeposition liquid set up is detected. CONSTITUTION:A semiconductor element substrate 3 is dipped as an anode in the electrodeposition liquid and a platinum electrode 2 as a cathode, and are applied with a constant DC voltage to cause the glass corpuscles to electrodeposit the semiconductor element substrate 3 not covered with a silicon oxide film 4. The fact that the potential of the electrodeposition liquid and the amount of the electrodeposition of glass are corresponded to 1 to 1 has been found experimentally, so that a monitoring electrode 6 which monitors the amount of the electrodeposition is kept inserted in the electrodeposition liquid and the electrodeposition is stopped when the potential on an electrometer V reaches the value set in advance. Thereby, the amount of the glass can be controlled regardless of the amount of the glass in the electrodeposition liquid, and the glass cracks after the firing of the glass decrease.
JP4931280A 1980-04-15 1980-04-15 Inactivating method for surface of semiconductor element Pending JPS56146239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4931280A JPS56146239A (en) 1980-04-15 1980-04-15 Inactivating method for surface of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4931280A JPS56146239A (en) 1980-04-15 1980-04-15 Inactivating method for surface of semiconductor element

Publications (1)

Publication Number Publication Date
JPS56146239A true JPS56146239A (en) 1981-11-13

Family

ID=12827435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4931280A Pending JPS56146239A (en) 1980-04-15 1980-04-15 Inactivating method for surface of semiconductor element

Country Status (1)

Country Link
JP (1) JPS56146239A (en)

Similar Documents

Publication Publication Date Title
EP0376611A3 (en) Electrophoretic system
US2851408A (en) Method of electrophoretic deposition of luminescent materials and product resulting therefrom
Laser et al. Electrogenerated Chemiluminescence: XXIII. On the Operation and Lifetime of ECL Devices
ES2015906B3 (en) SELECTIVE ELECTROLYTIC CLEANING OF SUBSTRATE METAL COATINGS WITH BASE METAL.
GB945648A (en) Improvements in or relating to a device for controlling light transmission
DE69219542D1 (en) Current arresters for electrochemical safety generators, production methods, and generators obtained therefrom
EP0450848A3 (en) Process for producing electrodeposited electrodes for use in electrochemical cells
ATE119951T1 (en) METHOD AND DEVICE FOR ELECTROPHORETIC DIP-COATING OF SMALL PARTS AND BULK GOODS.
JPS57192848A (en) Regulator for oxygen concentration
GB1460543A (en) Electrical detection of coating damage
JPS56146239A (en) Inactivating method for surface of semiconductor element
US4263108A (en) Control system for the electrolytic recovery of silver from photographic fixing solution
ATE11602T1 (en) METHOD AND APPARATUS FOR THE PREPARATION OF PHOTOGRAPHIC SOLUTIONS.
ATE23884T1 (en) PRECIPITATION OR SEPARATION OF PARTICLES FROM SOLUTION.
JPS6449272A (en) Manufacture of semiconductor device
FR2273277A1 (en) Dissolved substance concentration determination - by measuring current at anode effect onset during rapid cathode/anode voltage rise
ES8404067A1 (en) Method for controlling thickness of electrodeposition film
ATE69910T1 (en) METHOD AND DEVICE FOR MANUFACTURING A SEMICONDUCTOR LAYER.
JPS6412535A (en) Manufacture of semiconductor device
JPS6142921A (en) Oxdizing method for electrode and device therefor
JPS6331125A (en) Manufacture of semiconductor device
JP3294621B2 (en) Anodizing method
JPH068520B2 (en) Stabilization method of electrolyte solution
JPS6235029Y2 (en)
JPS5739197A (en) Apparatus for treating anodic reaction in electrolyte