JPS56129329A - Seal protective device for end cap in high-voltage oxidizing device - Google Patents
Seal protective device for end cap in high-voltage oxidizing deviceInfo
- Publication number
- JPS56129329A JPS56129329A JP3086680A JP3086680A JPS56129329A JP S56129329 A JPS56129329 A JP S56129329A JP 3086680 A JP3086680 A JP 3086680A JP 3086680 A JP3086680 A JP 3086680A JP S56129329 A JPS56129329 A JP S56129329A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- vapor
- refligerant
- tube
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To perform reaction under high-voltage oxidization or controlled vapor pressure by circulating a refligerant through the sealed inside between a quartz reaction tube and its end cap, tanks except a pressure container wherein the temperature of the refligerant is maintained at almost equal saturation temperature of the vapor in the reaction tube. CONSTITUTION:A semiconductor element is accommodated in a quartz tube 2 and a cap 5 is provided at the tube 2 and pressure is maintained 14 at 10kg/cm<2> by closing the cap 1a of a pressure container and by supplying 14 the inside of the container with gas. A tube 3 is pressurized by H2O+O2 caused by heating 2 and saturation vapor temperature is 179.04 deg.C at 10 atmospheres. The ambient temperature of an adaptor 4a will be around 180 deg.C by controlling the temperature of a refligerant at 180-190 deg.C and by passing the refligerant through paths 4c-4e by a pump 10 and the temperature at the internal circumference of the adaptor and the surface contacting with vapor drops to 180 deg.C or below to prevent the freeze of dew and an O ring 4b will also not be burnt. In this composition, the partial pressure ratio of supplied 6 H2 and vapor by O2 and O2 will easily be controlled and the ratio is very effective in practical use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3086680A JPS56129329A (en) | 1980-03-13 | 1980-03-13 | Seal protective device for end cap in high-voltage oxidizing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3086680A JPS56129329A (en) | 1980-03-13 | 1980-03-13 | Seal protective device for end cap in high-voltage oxidizing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56129329A true JPS56129329A (en) | 1981-10-09 |
Family
ID=12315643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3086680A Pending JPS56129329A (en) | 1980-03-13 | 1980-03-13 | Seal protective device for end cap in high-voltage oxidizing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56129329A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944821A (en) * | 1982-09-07 | 1984-03-13 | Toshiba Corp | Thermal treatment vessel for semiconductor |
| JPH029118A (en) * | 1988-06-27 | 1990-01-12 | Tel Sagami Ltd | Vertical type heat treating apparatus |
| JPH03212934A (en) * | 1990-01-18 | 1991-09-18 | Tokyo Electron Sagami Ltd | Vertical apparatus for heat treatment |
-
1980
- 1980-03-13 JP JP3086680A patent/JPS56129329A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5944821A (en) * | 1982-09-07 | 1984-03-13 | Toshiba Corp | Thermal treatment vessel for semiconductor |
| JPH029118A (en) * | 1988-06-27 | 1990-01-12 | Tel Sagami Ltd | Vertical type heat treating apparatus |
| JPH03212934A (en) * | 1990-01-18 | 1991-09-18 | Tokyo Electron Sagami Ltd | Vertical apparatus for heat treatment |
| JP2683603B2 (en) * | 1990-01-18 | 1997-12-03 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
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