JPS5610716B2 - - Google Patents

Info

Publication number
JPS5610716B2
JPS5610716B2 JP7158375A JP7158375A JPS5610716B2 JP S5610716 B2 JPS5610716 B2 JP S5610716B2 JP 7158375 A JP7158375 A JP 7158375A JP 7158375 A JP7158375 A JP 7158375A JP S5610716 B2 JPS5610716 B2 JP S5610716B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7158375A
Other languages
Japanese (ja)
Other versions
JPS51147133A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7158375A priority Critical patent/JPS51147133A/ja
Publication of JPS51147133A publication Critical patent/JPS51147133A/ja
Publication of JPS5610716B2 publication Critical patent/JPS5610716B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP7158375A 1975-06-12 1975-06-12 Non-voratile insulation gate semiconductor memory Granted JPS51147133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7158375A JPS51147133A (en) 1975-06-12 1975-06-12 Non-voratile insulation gate semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7158375A JPS51147133A (en) 1975-06-12 1975-06-12 Non-voratile insulation gate semiconductor memory

Publications (2)

Publication Number Publication Date
JPS51147133A JPS51147133A (en) 1976-12-17
JPS5610716B2 true JPS5610716B2 (de) 1981-03-10

Family

ID=13464849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7158375A Granted JPS51147133A (en) 1975-06-12 1975-06-12 Non-voratile insulation gate semiconductor memory

Country Status (1)

Country Link
JP (1) JPS51147133A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138284B2 (de) * 1982-11-22 1986-08-28 Nikken Kogaku Kk

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915380A (de) * 1972-05-18 1974-02-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915380A (de) * 1972-05-18 1974-02-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138284B2 (de) * 1982-11-22 1986-08-28 Nikken Kogaku Kk

Also Published As

Publication number Publication date
JPS51147133A (en) 1976-12-17

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