JPS5593240A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5593240A
JPS5593240A JP64479A JP64479A JPS5593240A JP S5593240 A JPS5593240 A JP S5593240A JP 64479 A JP64479 A JP 64479A JP 64479 A JP64479 A JP 64479A JP S5593240 A JPS5593240 A JP S5593240A
Authority
JP
Japan
Prior art keywords
insulating
distance
terminal
insulating distance
permitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP64479A
Other languages
Japanese (ja)
Inventor
Koichi Moriyama
Tomio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP64479A priority Critical patent/JPS5593240A/en
Publication of JPS5593240A publication Critical patent/JPS5593240A/en
Pending legal-status Critical Current

Links

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To obtain a mold type element by a method wherein the sufficient insulating distance is taken and outer diameter of the semiconductor device is made as short as possible.
CONSTITUTION: In order to take long insulating distance, the shape of the radiator 1 and that of the insulating plate 3 are made similar and the insulating distance between each terminal is made long. In order to make the semiconductor system outer diameter short, the cathode terminal 8 and the gate terminal 9 are taken out employing the insulated wire 11 and only the metal exposed portion is coated with resin 13. In this constitution, the insulating distance from the radiating plate 1 to the semiconductor element 5 is permitted to be 4mm or more and the insulating distance to each terminal is permitted to be a distance equivalent to the insulating wire length.
COPYRIGHT: (C)1980,JPO&Japio
JP64479A 1979-01-10 1979-01-10 Semiconductor device Pending JPS5593240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP64479A JPS5593240A (en) 1979-01-10 1979-01-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP64479A JPS5593240A (en) 1979-01-10 1979-01-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5593240A true JPS5593240A (en) 1980-07-15

Family

ID=11479405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP64479A Pending JPS5593240A (en) 1979-01-10 1979-01-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593240A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751246A (en) * 2012-05-31 2012-10-24 宗瑞 Power semiconductor module and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751246A (en) * 2012-05-31 2012-10-24 宗瑞 Power semiconductor module and manufacturing method thereof

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