JPS5591149A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5591149A
JPS5591149A JP16338378A JP16338378A JPS5591149A JP S5591149 A JPS5591149 A JP S5591149A JP 16338378 A JP16338378 A JP 16338378A JP 16338378 A JP16338378 A JP 16338378A JP S5591149 A JPS5591149 A JP S5591149A
Authority
JP
Japan
Prior art keywords
withstand voltage
junction
exposed surface
semiconductor element
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16338378A
Other languages
Japanese (ja)
Inventor
Tsunatoyo Yajima
Katsuyuki Fukuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP16338378A priority Critical patent/JPS5591149A/en
Publication of JPS5591149A publication Critical patent/JPS5591149A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To prevent a semiconductor element from deteriorating its withstand voltage due to ageing and thermal cycle by coating the exposed surface of a pn-junction thereof with a mixture of silicone varnish and silicone rubber to maintain thereby its initial withstand voltage.
CONSTITUTION: A mixture of silicone varnish and silicone rubber at a ratio of 1:1 by weight is coated on the exposed surface of a pn-junction in a semiconductor element. That is, after a solution mixed at this ratio is agitated in an agitating bottle for longer than one daylight and night, the solution is coated on the exposed surface of the pn-junction and heat treated at approx. 240°C for longer than 10 hours. Thus, its withstand voltage is not deteriorated by both thermal cycle test and voltage application test, but retains its initial withstand voltage. Further, the same result can be obtained by employing another hard polyester resin instead of the silicone varnish.
COPYRIGHT: (C)1980,JPO&Japio
JP16338378A 1978-12-27 1978-12-27 Semiconductor element Pending JPS5591149A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16338378A JPS5591149A (en) 1978-12-27 1978-12-27 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16338378A JPS5591149A (en) 1978-12-27 1978-12-27 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS5591149A true JPS5591149A (en) 1980-07-10

Family

ID=15772835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16338378A Pending JPS5591149A (en) 1978-12-27 1978-12-27 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5591149A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10359144B2 (en) 2016-10-25 2019-07-23 Toyota Jidosha Kabushiki Kaisha Method of manufacturing vacuum insulation panel and intermediate product

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10359144B2 (en) 2016-10-25 2019-07-23 Toyota Jidosha Kabushiki Kaisha Method of manufacturing vacuum insulation panel and intermediate product

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