JPS5583823A - Wide-band photo detection circuit - Google Patents
Wide-band photo detection circuitInfo
- Publication number
- JPS5583823A JPS5583823A JP15894078A JP15894078A JPS5583823A JP S5583823 A JPS5583823 A JP S5583823A JP 15894078 A JP15894078 A JP 15894078A JP 15894078 A JP15894078 A JP 15894078A JP S5583823 A JPS5583823 A JP S5583823A
- Authority
- JP
- Japan
- Prior art keywords
- amplifier
- load resistance
- parallel
- wide
- detection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To obtain a good-S/N and high-band photoelectric conversion electric signal characteristic by inserting a positive-phase amplifier of an approximately voltage gain 1 in parallel to a photo diode and outputting a synthesized voltage of this amplifier and a load resistance. CONSTITUTION:Positive-phase amplifier A of an approximately voltage gain 1 is inserted in parallel to photo diode iS, and a synthesized voltage of amplifier A and load resistance R is outputted. As the result, the input impedance of amplifier A can be large, and load resistance R can be made of a large value. Since the input capacity of amplifier A intself is in parallel with load resistance R, the influence of the input capacity can be reduced. Consequently, a good-S/N and high-band photoelectric conversion electric signal characteristic can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15894078A JPS5583823A (en) | 1978-12-21 | 1978-12-21 | Wide-band photo detection circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15894078A JPS5583823A (en) | 1978-12-21 | 1978-12-21 | Wide-band photo detection circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5583823A true JPS5583823A (en) | 1980-06-24 |
JPS6114448B2 JPS6114448B2 (en) | 1986-04-18 |
Family
ID=15682660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15894078A Granted JPS5583823A (en) | 1978-12-21 | 1978-12-21 | Wide-band photo detection circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5583823A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102636255A (en) * | 2012-04-12 | 2012-08-15 | 南通润邦电气工程有限公司 | Laser light intensity dispatching and amplifying circuit |
-
1978
- 1978-12-21 JP JP15894078A patent/JPS5583823A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102636255A (en) * | 2012-04-12 | 2012-08-15 | 南通润邦电气工程有限公司 | Laser light intensity dispatching and amplifying circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS6114448B2 (en) | 1986-04-18 |
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