JPS555709B2 - - Google Patents

Info

Publication number
JPS555709B2
JPS555709B2 JP9114271A JP9114271A JPS555709B2 JP S555709 B2 JPS555709 B2 JP S555709B2 JP 9114271 A JP9114271 A JP 9114271A JP 9114271 A JP9114271 A JP 9114271A JP S555709 B2 JPS555709 B2 JP S555709B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9114271A
Other languages
Japanese (ja)
Other versions
JPS4856379A (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9114271A priority Critical patent/JPS555709B2/ja
Priority to GB5013672A priority patent/GB1378062A/en
Priority to DE2255243A priority patent/DE2255243A1/de
Priority to CH1663472A priority patent/CH582427A5/fr
Publication of JPS4856379A publication Critical patent/JPS4856379A/ja
Publication of JPS555709B2 publication Critical patent/JPS555709B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP9114271A 1971-11-15 1971-11-16 Expired JPS555709B2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9114271A JPS555709B2 (fr) 1971-11-16 1971-11-16
GB5013672A GB1378062A (en) 1971-11-15 1972-10-31 Insulated gate-type field effect semiconductor device and a method of making the same
DE2255243A DE2255243A1 (de) 1971-11-15 1972-11-10 Isolierschicht-feldeffekthalbleiteranordnung
CH1663472A CH582427A5 (en) 1971-11-15 1972-11-15 Insulated gate field effect transistor - with high frequency response and breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9114271A JPS555709B2 (fr) 1971-11-16 1971-11-16

Publications (2)

Publication Number Publication Date
JPS4856379A JPS4856379A (fr) 1973-08-08
JPS555709B2 true JPS555709B2 (fr) 1980-02-08

Family

ID=14018261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9114271A Expired JPS555709B2 (fr) 1971-11-15 1971-11-16

Country Status (1)

Country Link
JP (1) JPS555709B2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6183850U (fr) * 1984-11-06 1986-06-03
JPH0433730Y2 (fr) * 1987-10-23 1992-08-12

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378627A (en) * 1980-07-08 1983-04-05 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6183850U (fr) * 1984-11-06 1986-06-03
JPH0433730Y2 (fr) * 1987-10-23 1992-08-12

Also Published As

Publication number Publication date
JPS4856379A (fr) 1973-08-08

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