JPS555709B2 - - Google Patents

Info

Publication number
JPS555709B2
JPS555709B2 JP9114271A JP9114271A JPS555709B2 JP S555709 B2 JPS555709 B2 JP S555709B2 JP 9114271 A JP9114271 A JP 9114271A JP 9114271 A JP9114271 A JP 9114271A JP S555709 B2 JPS555709 B2 JP S555709B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9114271A
Other languages
Japanese (ja)
Other versions
JPS4856379A (enrdf_load_html_response
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9114271A priority Critical patent/JPS555709B2/ja
Priority to GB5013672A priority patent/GB1378062A/en
Priority to DE2255243A priority patent/DE2255243A1/de
Priority to CH1663472A priority patent/CH582427A5/fr
Publication of JPS4856379A publication Critical patent/JPS4856379A/ja
Publication of JPS555709B2 publication Critical patent/JPS555709B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP9114271A 1971-11-15 1971-11-16 Expired JPS555709B2 (enrdf_load_html_response)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9114271A JPS555709B2 (enrdf_load_html_response) 1971-11-16 1971-11-16
GB5013672A GB1378062A (en) 1971-11-15 1972-10-31 Insulated gate-type field effect semiconductor device and a method of making the same
DE2255243A DE2255243A1 (de) 1971-11-15 1972-11-10 Isolierschicht-feldeffekthalbleiteranordnung
CH1663472A CH582427A5 (en) 1971-11-15 1972-11-15 Insulated gate field effect transistor - with high frequency response and breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9114271A JPS555709B2 (enrdf_load_html_response) 1971-11-16 1971-11-16

Publications (2)

Publication Number Publication Date
JPS4856379A JPS4856379A (enrdf_load_html_response) 1973-08-08
JPS555709B2 true JPS555709B2 (enrdf_load_html_response) 1980-02-08

Family

ID=14018261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9114271A Expired JPS555709B2 (enrdf_load_html_response) 1971-11-15 1971-11-16

Country Status (1)

Country Link
JP (1) JPS555709B2 (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6183850U (enrdf_load_html_response) * 1984-11-06 1986-06-03

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378627A (en) * 1980-07-08 1983-04-05 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6183850U (enrdf_load_html_response) * 1984-11-06 1986-06-03

Also Published As

Publication number Publication date
JPS4856379A (enrdf_load_html_response) 1973-08-08

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