JPS55500926A - - Google Patents
Info
- Publication number
- JPS55500926A JPS55500926A JP50018779A JP50018779A JPS55500926A JP S55500926 A JPS55500926 A JP S55500926A JP 50018779 A JP50018779 A JP 50018779A JP 50018779 A JP50018779 A JP 50018779A JP S55500926 A JPS55500926 A JP S55500926A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/969,346 US4213138A (en) | 1978-12-14 | 1978-12-14 | Demultiplexing photodetector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55500926A true JPS55500926A (US20070149660A1-20070628-C00105.png) | 1980-11-06 |
Family
ID=25515455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50018779A Pending JPS55500926A (US20070149660A1-20070628-C00105.png) | 1978-12-14 | 1979-12-04 |
Country Status (6)
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5516479A (en) * | 1978-07-21 | 1980-02-05 | Sumitomo Electric Ind Ltd | Heterojunction light receiving diode |
US4287527A (en) * | 1978-08-30 | 1981-09-01 | Bell Telephone Laboratories, Incorporated | Opto-electronic devices based on bulk crystals of complex semiconductors |
JPS6038036B2 (ja) * | 1979-04-23 | 1985-08-29 | 松下電器産業株式会社 | 電場発光素子 |
US4250516A (en) * | 1979-08-06 | 1981-02-10 | Bell Telephone Laboratories, Incorporated | Multistage avalanche photodetector |
SE418904B (sv) * | 1979-12-28 | 1981-06-29 | Asea Ab | Fiberoptiskt metdon for metning av fysikaliska storheter sasom lege, hastighet, acceleration, kraft, tryck, tojning och temperatur |
US4301463A (en) * | 1980-03-07 | 1981-11-17 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
US4316206A (en) * | 1980-04-14 | 1982-02-16 | The United States Of America As Represented By The Secretary Of The Navy | Two color narrow bandwidth detector |
US4374390A (en) * | 1980-09-10 | 1983-02-15 | Bell Telephone Laboratories, Incorporated | Dual-wavelength light-emitting diode |
FR2493047A1 (fr) * | 1980-10-28 | 1982-04-30 | Thomson Csf | Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique |
JPS5793585A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor photoreceiving element |
US4593304A (en) * | 1981-04-20 | 1986-06-03 | Hughes Aircraft Company | Heterostructure interdigital high speed photoconductive detector |
US4696648A (en) * | 1981-04-20 | 1987-09-29 | Hughes Aircraft Company | Heterostructure interdigital high speed photoconductive detector |
KR900000074B1 (ko) * | 1981-10-02 | 1990-01-19 | 미쓰다 가쓰시게 | 광 검출용 반도체장치 |
SE8106453L (sv) * | 1981-11-02 | 1983-05-03 | Asea Ab | Fotodiodstruktur med skreddarsydd spektral kenslighet |
US4476477A (en) * | 1982-02-23 | 1984-10-09 | At&T Bell Laboratories | Graded bandgap multilayer avalanche photodetector with energy step backs |
US4513305A (en) * | 1982-12-06 | 1985-04-23 | Gte Laboratories Incorporated | Multi-wavelength demultiplexer for fiber optical communication |
GB2172742B (en) * | 1985-03-21 | 1988-08-24 | Stc Plc | Photoconductor |
US4675020A (en) * | 1985-10-09 | 1987-06-23 | Kendall Mcgaw Laboratories, Inc. | Connector |
US5138416A (en) * | 1991-07-12 | 1992-08-11 | Xerox Corporation | Multi-color photosensitive element with heterojunctions |
US5747861A (en) * | 1997-01-03 | 1998-05-05 | Lucent Technologies Inc. | Wavelength discriminating photodiode for 1.3/1.55 μm lightwave systems |
US6353250B1 (en) * | 1997-11-07 | 2002-03-05 | Nippon Telegraph And Telephone Corporation | Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof |
US6794631B2 (en) | 2002-06-07 | 2004-09-21 | Corning Lasertron, Inc. | Three-terminal avalanche photodiode |
US6914314B2 (en) * | 2003-01-31 | 2005-07-05 | Foveon, Inc. | Vertical color filter sensor group including semiconductor other than crystalline silicon and method for fabricating same |
JP4956944B2 (ja) * | 2005-09-12 | 2012-06-20 | 三菱電機株式会社 | アバランシェフォトダイオード |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2949498A (en) * | 1955-10-31 | 1960-08-16 | Texas Instruments Inc | Solar energy converter |
US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
US3752713A (en) * | 1970-02-14 | 1973-08-14 | Oki Electric Ind Co Ltd | Method of manufacturing semiconductor elements by liquid phase epitaxial growing method |
US3993964A (en) * | 1974-07-26 | 1976-11-23 | Nippon Electric Company, Ltd. | Double heterostructure stripe geometry semiconductor laser device |
US3821777A (en) * | 1972-09-22 | 1974-06-28 | Varian Associates | Avalanche photodiode |
US3982261A (en) * | 1972-09-22 | 1976-09-21 | Varian Associates | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
DE2247966A1 (de) * | 1972-09-29 | 1974-04-11 | Heinz Prof Dr Rer Nat Beneking | Halbleiteranordnung zum nachweis von lichtstrahlen |
US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
FR2273371B1 (US20070149660A1-20070628-C00105.png) * | 1974-05-28 | 1978-03-31 | Thomson Csf | |
GB1508799A (en) * | 1974-09-26 | 1978-04-26 | Standard Telephones Cables Ltd | Light emissive semiconductor device |
US4142196A (en) * | 1975-07-08 | 1979-02-27 | U.S. Philips Corporation | Polychromatic monolithic semiconductor assembly |
US4053920A (en) * | 1975-11-10 | 1977-10-11 | The United States Of America As Represented By The Secretary Of The Army | Step graded photocathode |
US4045749A (en) * | 1975-11-24 | 1977-08-30 | Xerox Corporation | Corrugation coupled twin guide laser |
DE2629356C2 (de) * | 1976-06-30 | 1983-07-21 | AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang | Elektrooptischer Wandler zum Senden oder Empfangen |
FR2387519A1 (fr) * | 1977-04-15 | 1978-11-10 | Thomson Csf | Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode |
US4127862A (en) * | 1977-09-06 | 1978-11-28 | Bell Telephone Laboratories, Incorporated | Integrated optical detectors |
-
1978
- 1978-12-14 US US05/969,346 patent/US4213138A/en not_active Expired - Lifetime
-
1979
- 1979-11-28 CA CA340,800A patent/CA1132693A/en not_active Expired
- 1979-12-04 JP JP50018779A patent/JPS55500926A/ja active Pending
- 1979-12-04 WO PCT/US1979/001030 patent/WO1980001336A1/en unknown
- 1979-12-10 EP EP79302831A patent/EP0012585B1/en not_active Expired
- 1979-12-10 DE DE7979302831T patent/DE2966318D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0012585A1 (en) | 1980-06-25 |
DE2966318D1 (en) | 1983-11-17 |
CA1132693A (en) | 1982-09-28 |
US4213138A (en) | 1980-07-15 |
WO1980001336A1 (en) | 1980-06-26 |
EP0012585B1 (en) | 1983-10-12 |