JPS5549778B2 - - Google Patents
Info
- Publication number
- JPS5549778B2 JPS5549778B2 JP4632175A JP4632175A JPS5549778B2 JP S5549778 B2 JPS5549778 B2 JP S5549778B2 JP 4632175 A JP4632175 A JP 4632175A JP 4632175 A JP4632175 A JP 4632175A JP S5549778 B2 JPS5549778 B2 JP S5549778B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50046321A JPS51122383A (en) | 1975-04-18 | 1975-04-18 | Semiconductor memory |
| US05/677,130 US4062037A (en) | 1975-04-18 | 1976-04-15 | Semiconductor memory device |
| NL7604045A NL7604045A (nl) | 1975-04-18 | 1976-04-15 | Halfgeleider-geheugenorgaan. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50046321A JPS51122383A (en) | 1975-04-18 | 1975-04-18 | Semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51122383A JPS51122383A (en) | 1976-10-26 |
| JPS5549778B2 true JPS5549778B2 (US20030220297A1-20031127-C00009.png) | 1980-12-13 |
Family
ID=12743889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50046321A Granted JPS51122383A (en) | 1975-04-18 | 1975-04-18 | Semiconductor memory |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4062037A (US20030220297A1-20031127-C00009.png) |
| JP (1) | JPS51122383A (US20030220297A1-20031127-C00009.png) |
| NL (1) | NL7604045A (US20030220297A1-20031127-C00009.png) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5434438A (en) * | 1976-09-13 | 1995-07-18 | Texas Instruments Inc. | Random access memory cell with a capacitor |
| DE2706623A1 (de) * | 1977-02-16 | 1978-08-17 | Siemens Ag | Mis-fet fuer hohe source-drain-spannungen |
| US4353082A (en) * | 1977-07-29 | 1982-10-05 | Texas Instruments Incorporated | Buried sense line V-groove MOS random access memory |
| US4163985A (en) * | 1977-09-30 | 1979-08-07 | The United States Of America As Represented By The Secretary Of The Air Force | Nonvolatile punch through memory cell with buried n+ region in channel |
| US4471368A (en) * | 1977-10-13 | 1984-09-11 | Mohsen Amr M | Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor |
| JPS5718356A (en) * | 1980-07-07 | 1982-01-30 | Mitsubishi Electric Corp | Semiconductor memory storage |
| US6365474B1 (en) * | 2000-06-22 | 2002-04-02 | Motorola, Inc. | Method of fabricating an integrated circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3997799A (en) * | 1975-09-15 | 1976-12-14 | Baker Roger T | Semiconductor-device for the storage of binary data |
-
1975
- 1975-04-18 JP JP50046321A patent/JPS51122383A/ja active Granted
-
1976
- 1976-04-15 NL NL7604045A patent/NL7604045A/xx not_active Application Discontinuation
- 1976-04-15 US US05/677,130 patent/US4062037A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| NL7604045A (nl) | 1976-10-20 |
| JPS51122383A (en) | 1976-10-26 |
| US4062037A (en) | 1977-12-06 |
