JPS5542414B2 - - Google Patents

Info

Publication number
JPS5542414B2
JPS5542414B2 JP7181772A JP7181772A JPS5542414B2 JP S5542414 B2 JPS5542414 B2 JP S5542414B2 JP 7181772 A JP7181772 A JP 7181772A JP 7181772 A JP7181772 A JP 7181772A JP S5542414 B2 JPS5542414 B2 JP S5542414B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7181772A
Other versions
JPS4928790A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7181772A priority Critical patent/JPS5542414B2/ja
Publication of JPS4928790A publication Critical patent/JPS4928790A/ja
Publication of JPS5542414B2 publication Critical patent/JPS5542414B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Numerical Control (AREA)
  • Indexing, Searching, Synchronizing, And The Amount Of Synchronization Travel Of Record Carriers (AREA)
  • Programmable Controllers (AREA)
JP7181772A 1972-07-18 1972-07-18 Expired JPS5542414B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7181772A JPS5542414B2 (ja) 1972-07-18 1972-07-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7181772A JPS5542414B2 (ja) 1972-07-18 1972-07-18

Publications (2)

Publication Number Publication Date
JPS4928790A JPS4928790A (ja) 1974-03-14
JPS5542414B2 true JPS5542414B2 (ja) 1980-10-30

Family

ID=13471477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7181772A Expired JPS5542414B2 (ja) 1972-07-18 1972-07-18

Country Status (1)

Country Link
JP (1) JPS5542414B2 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128271A (en) * 1975-04-30 1976-11-09 Fujitsu Ltd Semiconductor unit
JPS6036110B2 (ja) * 1976-12-09 1985-08-19 工業技術院長 半導体装置

Also Published As

Publication number Publication date
JPS4928790A (ja) 1974-03-14

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