JPS5541707A - Multi-wavelength radiation element - Google Patents
Multi-wavelength radiation elementInfo
- Publication number
- JPS5541707A JPS5541707A JP11379978A JP11379978A JPS5541707A JP S5541707 A JPS5541707 A JP S5541707A JP 11379978 A JP11379978 A JP 11379978A JP 11379978 A JP11379978 A JP 11379978A JP S5541707 A JPS5541707 A JP S5541707A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- constitution
- layers
- led
- independently
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11379978A JPS5541707A (en) | 1978-09-16 | 1978-09-16 | Multi-wavelength radiation element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11379978A JPS5541707A (en) | 1978-09-16 | 1978-09-16 | Multi-wavelength radiation element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5541707A true JPS5541707A (en) | 1980-03-24 |
Family
ID=14621362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11379978A Pending JPS5541707A (en) | 1978-09-16 | 1978-09-16 | Multi-wavelength radiation element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5541707A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58103182A (ja) * | 1981-12-15 | 1983-06-20 | Nec Corp | 二波長発光ダイオ−ド |
US6264805B1 (en) | 1994-12-13 | 2001-07-24 | The Trustees Of Princeton University | Method of fabricating transparent contacts for organic devices |
US6358631B1 (en) | 1994-12-13 | 2002-03-19 | The Trustees Of Princeton University | Mixed vapor deposited films for electroluminescent devices |
US6365270B2 (en) | 1994-12-13 | 2002-04-02 | The Trustees Of Princeton University | Organic light emitting devices |
US6548956B2 (en) | 1994-12-13 | 2003-04-15 | The Trustees Of Princeton University | Transparent contacts for organic devices |
EP1469516A1 (en) * | 2003-04-14 | 2004-10-20 | Epitech Corporation, Ltd. | White-light emitting semiconductor device using a plurality of light emitting diode chips |
-
1978
- 1978-09-16 JP JP11379978A patent/JPS5541707A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58103182A (ja) * | 1981-12-15 | 1983-06-20 | Nec Corp | 二波長発光ダイオ−ド |
US6264805B1 (en) | 1994-12-13 | 2001-07-24 | The Trustees Of Princeton University | Method of fabricating transparent contacts for organic devices |
US6358631B1 (en) | 1994-12-13 | 2002-03-19 | The Trustees Of Princeton University | Mixed vapor deposited films for electroluminescent devices |
US6365270B2 (en) | 1994-12-13 | 2002-04-02 | The Trustees Of Princeton University | Organic light emitting devices |
US6548956B2 (en) | 1994-12-13 | 2003-04-15 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US6596134B2 (en) | 1994-12-13 | 2003-07-22 | The Trustees Of Princeton University | Method of fabricating transparent contacts for organic devices |
US7173369B2 (en) | 1994-12-13 | 2007-02-06 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US7714504B2 (en) | 1994-12-13 | 2010-05-11 | The Trustees Of Princeton University | Multicolor organic electroluminescent device formed of vertically stacked light emitting devices |
US8324803B2 (en) | 1994-12-13 | 2012-12-04 | The Trustees Of Princeton University | Transparent contacts for organic devices |
EP1469516A1 (en) * | 2003-04-14 | 2004-10-20 | Epitech Corporation, Ltd. | White-light emitting semiconductor device using a plurality of light emitting diode chips |
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