JPS5541535B2 - - Google Patents
Info
- Publication number
- JPS5541535B2 JPS5541535B2 JP6021076A JP6021076A JPS5541535B2 JP S5541535 B2 JPS5541535 B2 JP S5541535B2 JP 6021076 A JP6021076 A JP 6021076A JP 6021076 A JP6021076 A JP 6021076A JP S5541535 B2 JPS5541535 B2 JP S5541535B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H10P50/642—
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- H10P50/644—
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/582,736 US3969165A (en) | 1975-06-02 | 1975-06-02 | Simplified method of transistor manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51147970A JPS51147970A (en) | 1976-12-18 |
| JPS5541535B2 true JPS5541535B2 (enExample) | 1980-10-24 |
Family
ID=24330323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51060210A Granted JPS51147970A (en) | 1975-06-02 | 1976-05-26 | Method of producing semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3969165A (enExample) |
| JP (1) | JPS51147970A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61162580U (enExample) * | 1985-03-29 | 1986-10-08 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075241A (en) * | 1988-01-29 | 1991-12-24 | Texas Instruments Incorporated | Method of forming a recessed contact bipolar transistor and field effect device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3266127A (en) * | 1964-01-27 | 1966-08-16 | Ibm | Method of forming contacts on semiconductors |
| US3707410A (en) * | 1965-07-30 | 1972-12-26 | Hitachi Ltd | Method of manufacturing semiconductor devices |
| US3585089A (en) * | 1969-06-24 | 1971-06-15 | Westinghouse Electric Corp | Method of making fast switching semiconductive devices with silicon nitride passivation |
| US3670403A (en) * | 1970-03-19 | 1972-06-20 | Gen Electric | Three masking step process for fabricating insulated gate field effect transistors |
| US3771218A (en) * | 1972-07-13 | 1973-11-13 | Ibm | Process for fabricating passivated transistors |
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1975
- 1975-06-02 US US05/582,736 patent/US3969165A/en not_active Expired - Lifetime
-
1976
- 1976-05-26 JP JP51060210A patent/JPS51147970A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61162580U (enExample) * | 1985-03-29 | 1986-10-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51147970A (en) | 1976-12-18 |
| US3969165A (en) | 1976-07-13 |